A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

A substrate supporting device having a feeder structure that enables a large number of electrodes to be successfully supplied with power. A ceramic heater 100 includes a base 10 having an upper surface as a support surface on which a substrate is supported, electrodes 20 embedded in the base 10, a base-supporting member 30 that is mounted on a lower surface of the base 10 and that is formed of a heat insulating material, and feeder rods 40 that extend through respective through-holes 35 formed in a circumferential wall 34 of the base-supporting member 30 and extending in the vertical direction and that are electrically connected to the electrodes 20.

In a method, an electrode layer and an insulation layer are alternately and repeatedly stacked on a substrate. A first insulation layer is etched through a first dry etching process using an etching gas including fluorine to form an opening exposing a first electrode layer. The first electrode layer exposed by the opening is partially removed through an RIE process using oxygen and/or hydrogen plasma to enlarge the opening so that a second insulation layer is exposed. The second insulation layer exposed by the opening is etched through a second dry etching process using an etching gas including fluorine to enlarge the opening so that a second electrode layer is exposed. A contact plug is formed in the enlarged opening.

Disclosed is a multilayer insulator, a metal-insulator-metal (MIM) capacitor with the same, and a fabricating method thereof. The capacitor includes: a first electrode; an insulator disposed on the first electrode, the insulator including: a laminate structure in which an aluminum oxide (Al.sub.2O.sub.3) layer and a hafnium oxide (HfO.sub.2) layer are laminated alternately in an iterative manner and a bottom layer and a top layer are formed of the same material; and a second electrode disposed on the insulator.

Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

A light emitting element and display device are disclosed. In one example, a light emitting element includes a first electrode formed on a base body. A first insulation layer is formed on the base body and the first electrode and has an aperture portion in which a part of the first electrode is exposed. A second insulation layer is formed on the first insulation layer and has a protruding end portion protruding from the aperture portion. A third insulation layer is formed on the second insulation layer and has an end portion recessed from the protruding end portion. A charge injection/transport layer is formed over the second insulation layer and the third insulation layer. An organic layer includes a light emitting layer, and a second electrode formed on the organic layer. At least a part of the charge injection/transport layer is discontinuous at the protruding end portion.

The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The method includes: providing a substrate structure, where the substrate structure includes: a substrate having a first device region and a second device region, a first dummy gate structure at the first device region, a second dummy gate structure at the second device region, and an LDD region below the first dummy gate structure. The first dummy gate structure includes a first dummy gate dielectric layer at the first device region, a first dummy gate on the first dummy gate dielectric layer, and a first spacer layer at a side wall of the first dummy gate. The second dummy gate structure includes a second dummy gate dielectric layer at the second device region, a second dummy gate on the second dummy gate dielectric layer, and a second spacer layer at a side wall of the second dummy gate. The method further includes removing the first dummy gate; etching back the first spacer layer to reduce a thickness of the first spacer layer; removing an exposed portion of the first dummy gate dielectric layer to form a first trench; and removing the second dummy gate and exposed second dummy gate dielectric layer to form a second trench.

A laser annealing device includes a stage, a laser generator, and a reflective member. The stage supports a substrate with a thin film formed thereon to be processed, and may be moved in a first direction at a set or predetermined speed. The laser generator irradiates a first area of the thin film with a laser beam while the stage is moved. The reflective member reflects a part of the laser beam, which is reflected from the first area of the thin film, to a second area of the thin film. The first area and the second area are spaced apart from each other.

A differential type non-volatile memory circuit comprising a differential sensing circuit, a differential data line pair, a memory cell array, and a differential bit line pair is provided. The differential sensing circuit has a differential input terminal pair and a differential output terminal pair. The differential data line pair is electrically connected to the differential input terminal pair of the differential sensing circuit. The memory cell array has at least one differential non-volatile memory cell configured to store data. The differential bit line pair is electrically connected between the memory cell array and the differential data line pair. When logic states of the differential output terminal pair start to be different in a read operation phase of the memory cell array, the differential sensing circuit and the differential data line pair are disconnected.

The present invention provides a non-volatile memory and a manufacturing method for the same. In the non-volatile memory, a floating gate structure has a first sharp portion and a second sharp portion, and a corner formed by a side surface of the floating gate structure and a part of a top surface of the floating gate structure is not covered by a control gate structure. The corner is connected between the first sharp portion and one end of the second sharp portion. A tunneling dielectric layer of an erasing gate structure covers the first sharp portion, the second sharp portion, and a tip part of the corner.