A thin film transistor and a producing method thereof, and an array substrate, which belong to a technical field of the thin film transistor, can solve a problem of poor performance of a conventional thin film transistor. The producing method of the thin film transistor comprises: S1: forming a gate electrode (11) composed of graphene; S2: forming a gate insulating layer (12) composed of oxidized graphene; S3: forming an active region (13) composed of doped oxidized graphene or doped graphene; S4: forming a source electrode (14) and a drain electrode (15) composed of graphene, wherein, the graphene composing the source electrode (14), the drain electrode (15) and the gate electrode (11) is formed by reducing oxidized graphene, and the doped oxidized graphene or doped graphene composing the active region (13) is formed by treating oxidized graphene.

A thin film transistor and a producing method thereof, and an array substrate, which belong to a technical field of the thin film transistor, can solve a problem of poor performance of a conventional thin film transistor. The producing method of the thin film transistor comprises: S1: forming a gate electrode (11) composed of graphene; S2: forming a gate insulating layer (12) composed of oxidized graphene; S3: forming an active region (13) composed of doped oxidized graphene or doped graphene; S4: forming a source electrode (14) and a drain electrode (15) composed of graphene, wherein, the graphene composing the source electrode (14), the drain electrode (15) and the gate electrode (11) is formed by reducing oxidized graphene, and the doped oxidized graphene or doped graphene composing the active region (13) is formed by treating oxidized graphene.

A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.

A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.

The present invention relates to a process for the production of membranes of submicrometric thickness and rolls of Ga.sub.2O.sub.3 comprising the steps of: a) implanting ions in a monocrystal semiconductor of Ga.sub.2O.sub.3, with a cleavage plane parallel to the surface, at a temperature below 500? C., making an ion beam to strike, along a non-parallel direction to the referred cleavage plane, with an energy in the range of 10-4000 keV, a flux in the range of 1?10.sup.12-1?10.sup.14 ions/cm.sup.2.Math.s and a fluence in the range of 1?10.sup.13-1?10.sup.16 ions/cm.sup.2, forming at least one roll; b) subjecting the at least one roll formed in step a) to a thermal treatment at a temperature equal to or greater than 500? C.

The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.

A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.

A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.

A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.