A Faraday cage cavity package, having: a leadframe; a plastic body molded onto the leadframe to form a cavity exposing top surfaces of a die attach paddle, tie bars and lead fingers of the leadframe within the cavity; and a lid attached onto the top of the leadframe to protect a die attached to the die attach pad from electromagnetic fields, wherein the Faraday cage cavity package is manufactured in a matrix format and then separated into a plurality of individual Faraday cage cavity package units.

An object is to provide a technique that can suppress wet-spreading of an adhesive used to bond a case and a metal base to each other and secure the height position of the adhesive required to fill a gap created between the case and the metal base. A semiconductor device includes a metal base, an insulating substrate arranged on the metal base, a semiconductor element mounted on the insulating substrate, and a case bonded on the metal base so as to surround side surfaces of the insulating substrate and the semiconductor element, in which a pair of metal oxide films having a protruding shape is provided on a peripheral edge portion of the metal base, and the case is bonded to the metal base by an adhesive arranged in a region between the metal oxide films in the pair.

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

Disclosed is a light-emitting module, comprising: a circuit board, a conductive layer, a light-emitting device, and an adhesive material. The circuit board comprises a device-attachment area, the conductive layer being disposed on the device-attachment area, the light-emitting device being disposed on the conductive layer and electrically connected to the circuit board through the conductive layer, and the adhesive layer being used for connecting the light-emitting device to the circuit board, wherein a curing temperature of the adhesive layer is lower than a melting point of the conductive layer. Adopting the aforementioned technical means, the degree of offset in the position of the light-emitting device after reflow soldering can be greatly reduced. In addition, a vehicle lamp device using the light-emitting module is also provided.

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.

A method includes forming a release film over a carrier, attaching a device over the release film through a die-attach film, encapsulating the device in an encapsulating material, performing a planarization on the encapsulating material to expose the device, detaching the device and the encapsulating material from the carrier, etching the die-attach film to expose a back surface of the device, and applying a thermal conductive material on the back surface of the device.

A semiconductor package includes a substrate having a top surface and a bottom surface; a semiconductor die mounted on the top surface of the substrate; and a two-part lid mounted on a perimeter of the top surface of the substrate and housing the semiconductor die. The two-part lid comprises an annular lid base and a cover plate removably installed on the annular lid base.

Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.