An apparatus for separating a semiconductor cell, the apparatus includes a holding arrangement comprising a first holder section and a second holder section, the first holder section being configured to support a first section of the semiconductor cell, and the second holder section being configured to support a second section of the semiconductor cell, and a displacement arrangement configured to separate the first section of the semiconductor cell from the second section of the semiconductor cell by displacing the first section relative to the second section.

Provided is a deposition apparatus including a process chamber, a wafer platen and a shower head. The wafer platen is disposed in the process chamber. The shower head is located over the wafer platen and includes a shower plate and a hydrophobic film. The shower head has a plurality of dispensing holes for a reaction gas to pass through. The hydrophobic film is coated on a surface of the shower plate and surfaces of the plurality of dispensing holes. A method of forming a metal oxide layer using the deposition apparatus is further provided.

A method includes transmitting a radiation toward an electrostatic chuck, receiving a reflection of the radiation, analyzing the reflection of the radiation, determining whether a particle is present on the electrostatic chuck based on the analyzing the reflection of the radiation, and moving a cleaning tool to a location of the particle on the electrostatic chuck when the determination determines that the particle is present.

Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O.sub.2, CO, CO.sub.2, and water.

A die pickup method is disclosed. The die pickup method is used to pick up dies from a wafer that includes a first array in which a plurality of dies having a length and a width is arranged in a width direction, and a second array in which a plurality of dies is arranged parallel to the first array and having a number of dies greater than that of the first array. The die pickup method includes sequentially picking up dies of the first array in a first width direction from a first die located at a first end of the first array toward a second die located at a second end of the first array, detecting a third die of the second array adjacent to the second die, and detecting a fourth die located at a second end of the second array in the first width direction.

A cleaning wafer or substrate for use in cleaning, or in combination with, components of, for example, integrated chip manufacturing apparatus. The cleaning substrate can include a substrate having varying predetermined surface features, such as one or more predetermined adhesive, non-tacky, electrostatic, projection, depression, or other physical sections. The predetermined features can provide for more effective cleaning of the components with which they are used, such as an integrated chip manufacturing apparatus in the place of the integrated chip wafer. The cleaning substrate can be urged into cleaning or other position by vacuum, mechanical, electrostatic, or other forces. The cleaning substrate can adapted to accomplish a variety of functions, including abrading or polishing. The cleaning substrate may be made by a novel method of making, and it may then be used in a novel method of use I combination with chip manufacturing apparatus.

The present disclosure relates to a debonding apparatus. In some embodiments, the debonding apparatus comprises a wafer chuck configured to hold a pair of bonded substrates on a chuck top surface. The debonding apparatus further comprises a pair of separating blades including a first separating blade and a second separating blade placed at edges of the pair of bonded substrates. The first separating blade has a first thickness that is smaller than a second thickness of the second separating blade. The debonding apparatus further comprises a flex wafer assembly configured to pull the pair of bonded substrates upwardly to separate a second substrate from a first substrate of the pair of bonded substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.

Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals to form a transparent conductive structure.

A system includes a chamber, an inlet valve, a control device, and a recycle pipe. The chamber is configured to perform a semiconductor process and including an output port. The inlet valve is coupled to the chamber and a supply pipe. The controller is coupled to the inlet valve and the chamber. The recycle pipe arranged outside the chamber and coupled to the chamber. The recycle pipe is independent from the supply pipe. The controller is configured to determine whether the chamber is idle, and is configured to control the inlet valve based on the determination of whether the chamber is idle. When the controller closes the output port of the chamber and opens the inlet valve, water from the supply pipe flows into a wall of the chamber through the inlet vale first and then flows into the recycle pipe.

A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate; forming a silicon layer on the substrate, wherein an edge region of the top surface of the substrate is exposed from the silicon layer; epitaxially growing a GaN-based semiconductor material on the silicon layer and the substrate to form a GaN-based semiconductor layer on the silicon layer and a plurality of GaN-based nodules on the edge region of the top surface of the substrate; and performing a first dry etch step to remove the GaN-based nodules, wherein performing the first dry etch step includes applying a first bias power that is equal to or higher than 1500 W.