A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

A method for transferring a micro semiconductor element includes the following steps. A substrate, a bonding layer disposed on the substrate, and a supporting member disposed on the bonding layer opposite to the substrate are provided. The supporting member is bonded to a micro semiconductor element for supporting the same. A through hole is provided to extend through the substrate, the bonding layer, and the supporting member so as to forma transfer structure. A separation force is applied via the through hole to separate the micro semiconductor element from the supporting member.

Wafer processing with no dummies is sets forth, wherein an apparatus includes: a boat that hold a product substrates in array at all of positions where substrates may be held; a tubular reactor that houses the boat; a furnace surrounding an upper side and a lateral side of the reactor; a heater provided in the furnace and adapted to heat a side portion of the reactor; a ceiling heater provided in the furnace and adapted to heat a ceiling of the reactor; and a cap heater provided inside the reactor and below the boat; a gas supply mechanism individually supplying a gas to a top side of each of the product substrates.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

An impedance matching system is provided. The impedance matching system includes: an impedance matching device arranged between a radio frequency (RF) power supply and a reaction chamber, adapted to connect the RF power supply to the reaction chamber through a switch, and configured to automatically perform an impedance matching on an output impedance of the RF power supply and an input impedance of the impedance matching device; the switch and a load circuit, the switch being configured to enable the RF power supply to be selectively connected to the reaction chamber or to the load circuit; and a control unit configured to control the switch to connect the RF power supply to the reaction chamber or connect the RF power supply to the load circuit according to a preset timing sequence. The impedance matching device is configured to convert a continuous wave output of the RF power supply into a pulse output according to the preset timing sequence, and provide the pulse output to the reaction chamber. The preset timing sequence is obtained based on a frequency and a duty cycle of a pulsed RF signal required by a process.

A method of producing packaged semiconductor devices includes providing a first packaging substrate panel, providing a second packaging substrate panel, and moving the first and second packaging substrate panels through an assembly line that comprises a plurality of package assembly tools using a control mechanism. First type packaged semiconductor devices are formed on the first packaging substrate panel and second type packaged semiconductor devices are formed on the second packaging substrate panel. The control mechanism moves both of the first and packaging substrate panels through the assembly line in a non-linear manner. The first and second packaged semiconductor devices differ with respect to at least one of: lead configuration, and encapsulant configuration.

A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member, and the substrate are configured to be integrally removable to an outside of the processing chamber in a state in which the plurality of temperature sensors is installed.

This disclosure provides a device for supporting a substrate, an apparatus for manufacturing a display panel, and a method for supporting a substrate. The device for supporting a substrate comprises: a bearing mechanism being provided with a through hole for bearing a substrate; one or more sticky pads on the bearing mechanism surrounding the through hole, which are used for fixing the substrate on the bearing mechanism; and an elevating mechanism, which controls lifting and lowering of the substrate by passing through the through hole, wherein a top of the lifting mechanism is provided with a light-emitting member that emits light when in contact with the substrate, to illuminate the one or more sticky pads such that stickiness of the sticky pads is reduced from a first stickiness to a second stickiness.

The present invention provides a container for containing a plate to be used to remove particles in a processing apparatus for processing a substrate, comprising: a charging unit configured to charge the stored plate, wherein the charging unit includes a contactor configured to be in contact with the plate, and is configured to charge the plate by supplying electric charges to the plate via the contactor and then separating the contactor from the plate.