A method includes detecting a location of a particle on a bottom surface of an electrostatic chuck; moving a platform to a position under the bottom surface of the electrostatic chuck and right under the particle; and rotating the platform about a center of the platform to remove the particle from the bottom surface of the electrostatic chuck.

A sheet pasting device EA includes: a sheet feed unit 10 that feeds an adhesive sheet AS; and a press unit 20 that has a press roller 25 for pressing the adhesive sheet AS against a work WK and that pastes the adhesive sheet AS on the work WK by pressing the adhesive sheet AS against the work WK moving relative to the press roller 25, the press unit 20 bringing the press roller 25 into contact with an attachment surface WK1 of the work WK to displace the press roller 25 and rotating the press roller 25 on the attachment surface WK1, at a stage before pressing the adhesive sheet AS against the work WK using the press roller 25.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.

Replaceable contact pads of end effectors are provided. The contact pads support substrates in electronic device manufacturing. The contact pad includes a contact pad head having a contact surface configured to contact a substrate, a shaft coupled to the contact pad head, the shaft including a shaft indent formed between an underside of the contact pad head and a shaft end, and a circular securing member received around the shaft and seated in the shaft indent and configured to secure the contact pad to the end effector body. End effectors including replaceable contact pads and maintenance methods are described, as are additional aspects.

Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

A method of forming a semiconductor package includes providing a panel, providing one or more metal layers on an upper surface of the panel, forming a die pad and bond pads from the one or more metal layers, the die pad being adjacent to and spaced apart from the bond pads, attaching a die to the die pad, forming electrical connections between the die and the bond pads, encapsulating the die and the electrical connections with an electrically insulating mold compound, removing portions of the panel, and exposing the die pad and the bond pads after encapsulating the die.

A semiconductor process system includes a wafer support and a control system. The wafer support includes a plurality of heating elements and a plurality of temperature sensors. The heating elements heat a semiconductor wafer supported by the support system. The temperature sensors generate sensor signals indicative of a temperature. The control system selectively controls the heating elements responsive to the sensor signals.

An apparatus for mounting solder balls comprises a stage to support a substrate thereon, a mounting unit to mount solder balls on the substrate, and a solder ball mask between the mounting unit and the substrate. The solder ball mask includes a first face facing the substrate and a second face opposite to the first face. The solder ball mask has inner surfaces defining through-holes extending through a thickness of the solder ball mask from the second face to the first face. The apparatus causes the solder balls to move through separate, respective through-holes. Each of the through-holes includes a first opening defined in the first face and a second opening defined in the second face. A first spacing between adjacent first openings of the plurality of through-holes is different from a second spacing between adjacent second openings of the through-holes.