A substrate processing system includes a processing chamber including a showerhead, a plasma power source and a pedestal spaced from the showerhead to support a substrate. A filter is connected between the showerhead and the pedestal. A variable bleed current circuit is connected between the filter and the pedestal to vary a bleed current. A controller is configured to adjust a value of the bleed current and configured to perform curve fitting based on the bleed current and DC self-bias voltage to estimate at least one of electrode area ratio, Bohm current, and radio frequency (RF) voltage at a powered electrode.

An electronic device manufacturing system includes a motion control system for calibrating a gap between surfaces of process chamber or loadlock components by moving those component surfaces into direct contact with each other. The component surfaces may include a surface of a substrate and/or a substrate support and a surface of process delivery apparatus, which may be, e.g., a pattern mask and/or a plasma or gas distribution assembly. The motion control system may include a motion controller, a software program executable by the motion controller, a network, one or more actuator drivers, a software program executable by the one or more actuator drivers, one or more actuators, and one or more feedback devices. Methods of calibrating a gap via direct contact of process chamber or loadlock component surfaces are also provided, as are other aspects.

Disclosed are plasma processing apparatuses and methods of manufacturing semiconductor devices. The plasma processing apparatus includes a chamber including lower and upper housings, a window in the upper housing, an antenna for generating plasma of a first gas, wherein the antenna is disposed on the window and in the upper housing, a first pump for exhausting the first gas between the window and the lower housing, wherein the first pump is associated with the lower housing, a power supply for providing a power output, wherein the power supply is connected to the antenna through a first cavity of the upper housing, and a second pump for pumping a second gas between the window and in the upper housing so as to hold the antenna and the window onto an inside wall of the upper housing.

A method for producing a crystal substrate includes preparing, measuring, holding, and machining. The preparing prepares a crystal substrate body including a curved crystal lattice plane. The measuring measures a shape feature of the crystal lattice plane. The holding holds the crystal substrate body in a warped state in accordance with the shape feature measured by the measuring, to more flatten the crystal lattice plane than the crystal lattice plane at the preparing. The machining machines a surface of the crystal substrate body held in the warped state, to flatten the surface.

Provided are an apparatus for manufacturing a semiconductor device and a method of manufacturing a semiconductor package using the same. The manufacturing apparatus may include a base with a plurality of through holes and weight blocks respectively bound by the through holes.

A substrate treatment apparatus for treating a substrate, the substrate treatment apparatus includes: an apparatus main body configured to perform a predetermined treatment on the substrate; a casing configured to house a predetermined component therein and to be attachable to and detachable from an upper part of the apparatus main body; a casing side connection part provided at the casing and connected to the predetermined component; a main body side connection part provided at the upper part of the apparatus main body and configured to be fitted into the casing side connection part; a guide part provided at the upper part of the apparatus main body and configured to move the casing in one direction; and a connection assisting mechanism configured to fit the casing side connection part into the main body side connection part while moving the casing in the one direction.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

The present invention provides a chip mounting system and a method for mounting chips. The chip mounting system includes a first carrier device, a second carrier device, and a chip capturing device. The first carrier device includes a plurality of first carrier platforms for respectively carrying a plurality of semiconductor structures. Each semiconductor structure includes a base layer and a plurality of light emitting chips disposed on the base layer. The second carrier device includes a second carrier platform for carrying a circuit substrate. The chip capturing device is used for moving the light emitting chip from the base layer to the circuit substrate. The red, the green, and the blue light-emitting groups of the same sequence are disposed adjacent to each other, so that the red, the green, and the blue light-emitting chips of the same sequence are arranged adjacent to each other to form a pixel.

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.