At least one method, apparatus and system disclosed involves providing semiconductor device having transistors comprising back gates and front gates. The semiconductor device comprises a signal processing unit for processing an input signal to provide an output signal. The signal processing unit includes a first transistor and a second transistor. The first transistor includes a first back gate electrically coupled to a first front gate. The signal processing unit also includes a second transistor operatively coupled to the first transistor. The second transistor includes a second back gate electrically coupled to a second front gate. The semiconductor device also includes a gain circuit for providing a gain upon the output signal. The semiconductor device also includes a bias circuit to provide a first bias signal to the first back gate and a second bias signal to the second back gate.

A substrate processing apparatus including a plurality of processing devices each of which processes a substrate is provided. The apparatus comprises a conveying device including a conveyance path and conveys, to one of the plurality of processing devices, a substrate conveyed into one end of the conveyance path from an outside of the substrate processing apparatus, and an adjusting device configured to perform adjustment of a pre-alignment state of the substrate conveyed from the one end and to be conveyed into one of the plurality of processing devices, wherein the adjusting device is arranged on the conveyance path and between a processing devices of the plurality of processing devices, farthest from the one end, and a processing device, of the plurality of processing devices, closest to the one end.

Provided are an apparatus for manufacturing a semiconductor device and a method of manufacturing a semiconductor package using the same. The manufacturing apparatus may include a base with a plurality of through holes and weight blocks respectively bound by the through holes.

Work piece carrier device to be installed in a vacuum chamber of a vacuum treatment system, comprising: one carousel X with a diameter d.sub.X, one or multiple carousels Y.sub.m with a diameter d.sub.Ym<d.sub.X, which are mountable on carousel X one or multiple work piece supports Z.sub.n with diameters d.sub.Zn≤d.sub.Ym, which are mountable on the one or multiple carousels Y.sub.m, two actuators A1 and A2.

A device for applying underfill material into a space between a substrate and a semiconductor chip is provided. The device includes a frame housing configured to cover at least an outer edge area of the semiconductor chip that is bonded to the substrate. The device also includes a sealant attached to the frame housing and configured to contact the outer edge area of the semiconductor chip. The device also includes an outlet made on the frame housing for evacuating the space; and an inlet made on the frame housing for injecting the underfill material to the space.

Examples of the application provide a method for manufacturing a semiconductor and a multi-piece deposition device. The method for manufacturing the semiconductor includes: performing a first-round deposition process on a substrate in the multi-piece deposition device; taking out the substrate after the first-round deposition process is completed; introducing an auxiliary gas into the multi-piece deposition device, and forming plasmas from the auxiliary gas; placing a substrate to be deposited in the multi-piece deposition device; and performing a second-round deposition process on the substrate in the multi-piece deposition device. The auxiliary gas is introduced and converted into the plasmas in a time interval of waiting time between the first-round deposition process and the second-round deposition process.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

A protective layer is formed over a copper seed layer on a semiconductor substrate prior to electroplating. The protective layer is capable of protecting the copper seed layer from oxidation and from dissolution in an electrolyte during initial phases of electroplating. The protective layer, in some embodiments, prevents the copper seed layer from contacting atmosphere, and from being oxidized by atmospheric oxygen and/or moisture. The protective layer contains a metal that is less noble than copper (e.g., cobalt), where the metal can be in an oxidized form that is readily soluble in a plating liquid. In one embodiment a protective cobalt layer is formed by depositing cobalt metal by chemical vapor deposition over copper seed layer without exposing the copper seed layer to atmosphere, followed by subsequent oxidation of cobalt to cobalt oxide that occurs after the substrate is exposed to atmosphere. The resulting protective layer is dissolved during electroplating.

Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.