Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O.sub.2, CO, CO.sub.2, and water.

A substrate treatment apparatus for treating a substrate, the substrate treatment apparatus includes: an apparatus main body configured to perform a predetermined treatment on the substrate; a casing configured to house a predetermined component therein and to be attachable to and detachable from an upper part of the apparatus main body; a casing side connection part provided at the casing and connected to the predetermined component; a main body side connection part provided at the upper part of the apparatus main body and configured to be fitted into the casing side connection part; a guide part provided at the upper part of the apparatus main body and configured to move the casing in one direction; and a connection assisting mechanism configured to fit the casing side connection part into the main body side connection part while moving the casing in the one direction.

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

A semiconductor process system includes a wafer support and a control system. The wafer support includes a plurality of heating elements and a plurality of temperature sensors. The heating elements heat a semiconductor wafer supported by the support system. The temperature sensors generate sensor signals indicative of a temperature. The control system selectively controls the heating elements responsive to the sensor signals.

The present invention provides a container for containing a plate to be used to remove particles in a processing apparatus for processing a substrate, comprising: a charging unit configured to charge the stored plate, wherein the charging unit includes a contactor configured to be in contact with the plate, and is configured to charge the plate by supplying electric charges to the plate via the contactor and then separating the contactor from the plate.

Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

A method includes emitting, by a first portion of an optical inspection instrument, a radiation toward a supporting surface of a chuck, wherein the chuck is configured for fixing a semiconductor workpiece on the supporting surface, and the optical inspection instrument faces the supporting surface; receiving, by a second portion of the optical inspection instrument, a reflection of the radiation reflected from the chuck; analyzing the reflection of the radiation; determining whether a particle is present on the supporting surface of the chuck based on the analyzing the reflection of the radiation; and removing the particle by using a cleaning tool comprising an exhaust duct.

Discussed is a device for self-assembling semiconductor light-emitting including: a chip supply part to supply the semiconductor light-emitting diodes to the substrate in cooperation with magnets disposed in a plurality of rows to form the magnetic field, wherein the chip supply part includes: a chip accommodating part to accommodate the semiconductor light-emitting diodes; a vertical moving part to adjust a distance between the chip supply part and the magnets; a horizontal moving part to move the chip supply part such that the chip accommodating part is alternately overlapped with a part of the magnets; and a controller to drive the vertical and horizontal moving parts to control a position of the chip supply part, and the controller moves the chip supply part in at least one of a horizontal direction and a vertical direction at a predetermined path and a plurality of points existing on the predetermined path.

A pumping line arrangement includes a chamber connecting line which is fluidly connectable to a process chamber that forms part of a semiconductor fabrication tool. The pumping line arrangement also includes a valve module which is fluidly connected to the chamber connecting line. The valve module splits the chamber connecting line into respective first and second pumping lines. The first pumping line is intended to carry a first process flow and the second pumping line is intended to carry a second process flow which is incompatible with the first process flow. At least one of the first pumping line or the second pumping line includes fluidly connected therewithin a pre-abatement module that is configured to remove one or more incompatible constituents from the process flow intended to be carried by the other pumping line.

A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.