A substrate processing apparatus includes: a substrate holder to vertically load a plurality of substrates in multiple stages with an interval therebetween and including a plurality of partition plates vertically partitioning a region where the plurality of substrates are loaded; a process chamber to receive the substrate holder therein; protrusions protruding inward toward the outer circumferential surfaces of the partition plates from an inner circumferential wall surface within the process chamber, which faces the outer circumferential surfaces of the partition plates, to form clearances between inner circumferential surfaces formed on the protruding tip ends of the protrusions and the outer circumferential surfaces of the partition plates; and a gas supply part to supply inert gas into the clearances, which are formed between the inner circumferential surfaces of the protrusions and the outer circumferential surfaces of the partition plates, to form positive-pressure sections subjected to a pressure higher than ambient pressure.

An apparatus, system and method for storing die carriers and transferring a semiconductor die between the die carriers. A die stocker includes a rack enclosure with an integrated sorting system. The rack enclosure includes storage cells configured to receive and store die carriers having different physical configurations. A transport system transports first and second die carriers between a first plurality of storage cells and a first sorter load port, where the transport system introduces the first and second die carriers to a first sorter. The transport system transports third and fourth die carriers between a second plurality of storage cells and a second sorter load port, where the transport system introduces the third and fourth die carriers to a second sorter. The first and second die carriers have a first physical configuration, and the third and fourth die carriers have a second physical configuration, different than the first physical configuration.

A cooling method is a method of cooling a processed substrate in a state of being held by a substrate holder, the method including: a first cooling step of cooling the substrate by supplying a gas toward the substrate holder disposed at a reference position; a stopping step of stopping supply of the gas; and a second cooling step of cooling the processed substrate held in a lower portion of the substrate holder.

A substrate processing method includes: carrying out a substrate from a substrate transfer container by a substrate transfer device; placing the substrate in a first position of a substrate holder; moving the substrate holder into a reaction container and processing the substrate in the reaction chamber; obtaining a film thickness measurement result of the substrate processed in the reaction container; creating a model from the film thickness measurement result; determining a second position where the substrate is placed in the substrate holder and a transfer position setting value obtained from the model; adjusting the first position of the substrate to the second position; calculating an eccentricity state of the substrate from a newly obtained film thickness measurement result; calculating an optimization such that the eccentricity state is minimized; and determining a third position to which a new substrate is placed from the transfer position setting value.

A substrate processing apparatus includes a transfer chamber; an upper gas supply mechanism for supplying a gas into an upper region of the transfer chamber through a first gas supply port; and a lower gas supply mechanism configured to supply the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber at a back surface of the first gas supply port; a pair of upper ducts at both sides of the first buffer chamber; and a first ventilation unit at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber at a back surface of the second gas supply port; a lower duct at lower surface of the second buffer chamber; and a second ventilation unit at a lower end of the lower duct.

A chamber includes a sidewall, a cooling pipe, and an external pipe. The cooling pipe includes a first segment extending along the sidewall of the chamber, and includes multiple purge nozzles. The external pipe extends to inside the chamber and is connected to the first segment of the cooling pipe. A semiconductor processing station includes a central transfer chamber, a load lock chamber, and a cooling stage. The load lock chamber and the cooling stage are disposed adjacent to the central transfer chamber. The load lock chamber is adapted to contain a wafer carrier having multiple wafers. The central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer between the cooling stage and the load lock chamber. A semiconductor process using the semiconductor processing station is also provided.

Examples of the application provide a method for manufacturing a semiconductor and a multi-piece deposition device. The method for manufacturing the semiconductor includes: performing a first-round deposition process on a substrate in the multi-piece deposition device; taking out the substrate after the first-round deposition process is completed; introducing an auxiliary gas into the multi-piece deposition device, and forming plasmas from the auxiliary gas; placing a substrate to be deposited in the multi-piece deposition device; and performing a second-round deposition process on the substrate in the multi-piece deposition device. The auxiliary gas is introduced and converted into the plasmas in a time interval of waiting time between the first-round deposition process and the second-round deposition process.

A cassette which receives a substrate, and a substrate receiving system including a chamber which receives a cassette in which a substrate is loaded are provided. The cassette which receives a substrate includes: a plurality of slot supports stacked in a first direction; and a frame connected to the plurality of slot supports and extending in the first direction, wherein the plurality of slot supports and the frame are opened in an outward direction to receive the substrate, and are closed in an inward direction after the substrate is received.

A substrate processing apparatus includes a substrate processing unit, a partition wall, a first gas supply, and a second gas supply. The substrate processing unit performs a liquid processing on a substrate. The partition wall separates a first space defined from a carry-in/out port through which the substrate is loaded to the substrate processing unit, and a second space other than the first space. The first gas supply is connected to the partition wall, and supplies an atmosphere adjusting gas to the first space. The second gas supply is connected to a place different from the first gas supply in the partition wall, and supplies an atmosphere adjusting gas to the first space.

A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.