A substrate processing apparatus includes a processing tank, a holder, an organic solvent supply, a drainage port, a gas supply, and an exhaust port. The processing tank stores an aqueous layer. The holder holds a substrate. The organic solvent supply supplies an organic solvent onto the aqueous layer to form a liquid layer of the organic solvent. The drainage port discharges the aqueous layer from a bottom wall of the processing tank and causes the liquid layer of the organic solvent to descend from above the substrate to below the substrate. The gas supply supplies a gas of a water repellent agent to the liquid layer from above the processing tank while the liquid layer descends. The exhaust port is exposed on a side wall of the processing tank by the descending of the liquid layer and discharges the gas of the water repellent gas.

Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre-heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.

A substrate heating apparatus includes: a substrate support configured to substantially horizontally support a substrate; a heater provided below the substrate support substantially parallel to the substrate, and having a predetermined planar shape; and a side portion extending downward from an outer peripheral portion of the heater.

A substrate processing system includes a substrate processing set and a substrate holding unit. The substrate processing set includes a substrate supporting part for supporting a vertical substrate. The substrate holding unit includes two cantilevers and two substrate holding parts. Each of the substrate holding parts is respectively located on each of the cantilevers. The two substrate holding parts are used for holding the substrate vertically. When the substrate holding unit moves next to the substrate processing set and the two substrate holding parts touch the substrate, the two substrate holding parts hold the substrate.

A cassette for receiving at least one substrate for a display device includes a base; and a first wall extending in a direction generally perpendicular to an upper surface of the base and a plurality of first projections extending from the first wall in a first direction and arranged in a second direction generally perpendicular to the first direction at substantially regular intervals. A first opening is defined between adjacent first projections to receive one end of a first substrate, the first opening includes a first portion having a first width in the second direction and a second portion having a second width greater than the first width, and the first portion is disposed closer to the first wall than the second portion.

A method for forming a film is provided. The method includes sequentially placing a first wafer, a second wafer, and a third wafer in a chamber. The first wafer is separated from the second wafer by a first distance, the second wafer is separated from the third wafer by a second distance, and the first distance is smaller than the second distance. At least one process gas is introduced sequentially passing through the first wafer, the second wafer and the third wafer in the chamber.

Described herein is a technique capable of substantially cancelling out a machine difference of a pressure control valve. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a sensor detecting a valve opening degree; a first control circuit outputting a valve opening degree control signal based on a valve opening degree value detected by the sensor and a deviation between a pressure of the process chamber and a target vacuum pressure value; a second control circuit outputting an electropneumatic control signal based on the valve opening degree control signal; and a span adjustment circuit adjusting the first or second control circuit so that an upper limit value of the valve opening degree is set to a predetermined full opening degree less than a physically defined full opening degree.

A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.

A substrate processing system includes: a loading/unloading part into/from which a cassette that accommodates a plurality of substrates is loaded/unloaded; a batch-type processing part configured to collectively process a lot including the plurality of substrates; a single-substrate-type processing part configured to the plurality of substrates of the lot one by one; and an interface part configured to deliver the plurality of substrates between the batch-type processing part and the single-substrate-type processing part, wherein the loading/unloading part, the single-substrate-type processing part, the interface part, and the batch-type processing part are arranged in this order, and wherein the interface part comprises a lot formation part configured to form the lot, and a transfer part configured to transfer the plurality of substrates from the single-substrate-type processing part to the lot formation part, and configured to transfer the plurality of substrates from the batch-type processing part to the single-substrate-type processing part.

A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.