A system includes a factory interface, a deposition tool, and at least one measuring device. The factory interface is configured to carry a wafer. The deposition tool is coupled to the factory interface and configured to process the wafer transferred from the factory interface. The at least one measuring device is equipped in the factory interface, the deposition tool, or the combination thereof. The at least one measuring device is configured to perform real-time measurements of a thickness of a material on the wafer that is carried in the factory interface or the deposition tool.

Contamination of semiconductor wafers during coating and other operations is mitigated by passing the wafer through a tunnel with a slit providing a gas curtain which impinges upon the wafer as the wafer is transported from one station to the next station in the processing apparatus.

A wafer processing device may include a wafer exchanger including two or more blades, each of the two or more blades may be configured to receive a wafer, the two or more blades may be rotatable about an axis on a single horizontal plane, and the two or more blades may be movable between at least a load cup and a robot access location; wherein the load cup may include a wafer station that is vertically moveable relative a blade located in the load cup and may be configured to remove a wafer from a blade located in the load cup and place a wafer on a blade located in the load cup. Other devices, load cups and methods are also disclosed herein.

A processing fluid supplying method includes: supplying a processing fluid of a gaseous state to a circulation line; generating a processing fluid of a liquid state by cooling the processing fluid of the gaseous state in the circulation line; branching the processing fluid of the liquid state from the circulation line to a branch line; and generating a processing fluid of a supercritical state by heating the processing fluid of the liquid state in the circulation line.

A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has grounding electrodes and grounding pads located at edges, and a thin film covering the grounding electrodes but exposing the grounding pads. The workpiece carrier has carrier electrodes located around the workpiece and inside grounding ports at the bottom. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a Z-elevator to raise the workpiece carrier toward the poling source using the grounding ports, and grounding mechanisms including downwardly biased electrical contacts which, when the workpiece carrier is raised by the Z-elevator, connect the grounding pads of the workpiece with the carrier electrodes, to ground the workpiece. The poling apparatus additionally includes preparation platform and transfer platform with conveyer systems with rollers and Z-elevators to move the workpiece carrier in and out of the poling chamber.

A wafer processing device may include a wafer exchanger including two or more blades, each of the two or more blades may be configured to receive a wafer, the two or more blades may be rotatable about an axis on a single horizontal plane, and the two or more blades may be movable between at least a load cup and a robot access location; wherein the load cup may include a wafer station that is vertically moveable relative a blade located in the load cup and may be configured to remove a wafer from a blade located in the load cup and place a wafer on a blade located in the load cup. Other devices, load cups and methods are also disclosed herein.

Disclosed are an apparatus and a method for liquid-treating a substrate. An apparatus for treating a substrate includes a liquid treatment chamber that supplies a liquid onto the substrate to liquid-treat the substrate, a drying chamber that removes the remained liquid on the substrate, and a transfer unit that transfers the substrate between the liquid treatment chamber and the drying chamber, wherein the transfer unit includes a hand that supports the substrate, and a weight measuring unit that measures a weight of the remained liquid on the substrate. A weight of a remained liquid on a substrate may be measured by measuring a weight of the substrate while the substrate is transferred.

A system for maintaining a device in a semiconductor manufacturing environment that includes a controller configured to determine a distance travelled by the device within the semiconductor manufacturing environment, where the device has a feature that selectively engages a carrier configured to carry a semiconductor wafer such that the device moves the semiconductor wafer to different processing stations within the semiconductor manufacturing environment. The system also includes an inspection component configured to inspect the device responsive to the distance traveled by the device exceeding a distance threshold, a repair component configured to repair the device responsive to a repair indication from at least one of the controller or the inspection component, and a cleaning component configured to clean the device responsive to a clean indication from at least one of the controller or the inspection component.

An annealing apparatus includes: a first chamber including a first gas having a first gas pressure; a second chamber configured to receive a second gas having a second gas pressure; gas inlets; gas vents; heating elements laterally surrounding the first chamber; and a controller configured to perform the steps of: heating the first chamber while keeping a gas pressure difference between the first gas pressure and the second gas pressure is within a tolerance limit; and cooling the first chamber by exchanging the second gas in the second chamber while keeping the gas pressure difference within the tolerance limit, wherein the exchanging of the second gas includes introducing the second gas to the second chamber through the plurality of gas inlets and exhausting a the second gas out of the second chamber through the plurality of gas vents while keeping the second gas pressure unchanged.

A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has grounding electrodes and grounding pads located at edges, and a thin film covering the grounding electrodes but exposing the grounding pads. The workpiece carrier has carrier electrodes located around the workpiece and inside grounding ports at the bottom. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a Z-elevator to raise the workpiece carrier toward the poling source using the grounding ports, and grounding mechanisms including downwardly biased electrical contacts which, when the workpiece carrier is raised by the Z-elevator, connect the grounding pads of the workpiece with the carrier electrodes, to ground the workpiece. The poling apparatus additionally includes preparation platform and transfer platform with conveyer systems with rollers and Z-elevators to move the workpiece carrier in and out of the poling chamber.