A method is provided for area-selective deposition on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting film-forming modules, etching modules, and transfer modules. A workpiece having a target surface of a first material an non-target surface of a second material different than the first material is received into the platform. An additive material is selectively deposited on the workpiece with the additive material forming on the target surface at a higher deposition rate than on the non-target surface, followed by etching to expose the non-target surface. The integrated sequence of processing steps is executed within the platform without leaving the controlled environment and the transfer modules are used to transfer the workpiece between the processing modules while maintaining the workpiece within the controlled environment. The processing steps including inspecting the workpiece and taking corrective action based on the detected non-conformities.

A method for etching a surface including obtaining a substrate comprising a material; reacting a surface of a substrate with a reactant, comprising a gas or a plasma, to form a reactive layer on the substrate, the reactive layer comprising a chemical compound including the reactant and the material; and wet etching or dissolving the reactive layer with a liquid wet etchant of solvent that selectively etches or dissolves the reactive layer but not the substrate.

In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Disclosed are an apparatus and a method for liquid-treating a substrate. An apparatus for treating a substrate includes a liquid treatment chamber that supplies a liquid onto the substrate to liquid-treat the substrate, a drying chamber that removes the remained liquid on the substrate, and a transfer unit that transfers the substrate between the liquid treatment chamber and the drying chamber, wherein the transfer unit includes a hand that supports the substrate, and a weight measuring unit that measures a weight of the remained liquid on the substrate. A weight of a remained liquid on a substrate may be measured by measuring a weight of the substrate while the substrate is transferred.

This disclosure relates to a method for using a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing method can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

Provided are a cleaning device and a method for driving the cleaning device which cleans a wafer after chemical mechanical polishing. The cleaning device includes a cleaning modules and a running beam, the running beam including a first blade and a second blade to insert or remove the wafer with respect to one of the cleaning modules in a second direction, the first blade and the second blade being fixed to the running beam and movable in the second direction, and the cleaning modules including an input module, a megasonic module, a first brush module, a second brush module and a drying module. The driving method includes performing an operation of inserting or removing the wafer in the second direction using the first blade in a first area; and performing an operation of inserting or removing the wafer in the second direction using the second blade in a second area.

A collet apparatus is provided including a body. A first adsorption unit is connected to the body. A second adsorption unit is connected to the first adsorption unit. The second adsorption unit adsorbs a semiconductor chip. An illumination unit is disposed inside the body, and provides a light to the semiconductor chip adsorbed onto the second adsorption unit to examine the semiconductor chip.

Disclosed are an apparatus and a method for liquid-treating a substrate. An apparatus for treating a substrate includes a liquid treatment chamber that supplies a liquid onto the substrate to liquid-treat the substrate, a drying chamber that removes the remained liquid on the substrate, and a transfer unit that transfers the substrate between the liquid treatment chamber and the drying chamber, wherein the transfer unit includes a hand that supports the substrate, and a weight measuring unit that measures a weight of the remained liquid on the substrate. A weight of a remained liquid on a substrate may be measured by measuring a weight of the substrate while the substrate is transferred.

A method of preparing a self-aligned via on a semiconductor workpiece includes using an integrated sequence of processing steps executed on a common manufacturing platform hosting a plurality of processing modules including one or more film-forming modules, one or more etching modules, and one or more transfer modules. The integrated sequence of processing steps include receiving the workpiece into the common manufacturing platform, the workpiece having a pattern of metal features in a dielectric layer wherein exposed surfaces of the metal features and exposed surfaces of the dielectric layer together define an upper planar surface; selectively etching the metal features to form a recess pattern by recessing the exposed surfaces of the metal features beneath the exposed surfaces of the dielectric layer using one of the one or more etching modules; and depositing an etch stop layer over the recess pattern using one of the one or more film-forming modules.

A method for forming a fully self-aligned via is provided. A workpiece having a pattern of features in a dielectric layer is received into a common manufacturing platform. Metal caps are deposited on the metal features, and a barrier layer is deposited on the metal caps. A first dielectric layer is added to exposed dielectric material. The barrier layer is removed and an etch stop layer is added on the exposed surfaces of the first dielectric layer and the metal caps. Additional dielectric material is added on top of the etch stop layer, then both the additional dielectric material and a portion of the etch stop layer are etched to form a feature to be filled with metal material. An integrated sequence of processing steps is executed within one or more common manufacturing platforms to provide controlled environments. Transfer modules transfer the workpiece between processing modules within and between controlled environments.