A method of fabricating and transferring high quality and manufacturable light-emitting devices, such as micro-sized light-emitting diodes (μLEDs), edge-emitting lasers and vertical-cavity surface-emitting lasers (VCSELs), using epitaxial later over-growth (ELO) and isolation methods. III-nitride semiconductor layers are grown on a host substrate using a growth restrict mask, and the III-nitride semiconductor layers on wings of the ELO are then made into the light-emitting devices. The devices are isolated from the host substrate to a thickness equivalent to the growth restrict mask and then transferred or lifted from of the host substrate. Back-end processing of the devices is then performed, such as attaching distributed Bragg reflector (DBR) mirrors, forming cladding layers, and/or adding heatsinks.

The present invention is an IC chip mounting apparatus for mounting an IC chip at a reference position of an inlay antenna while conveying the antenna, the IC chip mounting apparatus including: a nozzle configured to suck an IC chip when located at a first position and to place the IC chip at the reference position of the antenna when located at a second position; a nozzle attachment to which the nozzle is attached; an image acquisition unit configured to acquire an image of the IC chip sucked by the nozzle; and a correction amount determination unit configured to determine correction amounts for the IC chip sucked by the nozzle, based on the image acquired by the image acquisition unit. The correction amounts includes a first correction amount for correcting an angle of the nozzle around the axis, a second correction amount for correcting a position of the antenna in a conveying direction of the antenna, and a third correction amount for correcting the position of the antenna in a width direction.

A substrate processing apparatus includes the following: a support frame, first stage, a suction part, and a plurality of island-type second stages. The support frame is disposed on the first stage. The height of the support frame is lower than the height of the first stage. A plurality of island-type second stages are disposed on the support frame on the same plane as the first stage. The suction part is disposed on the support frame.

A wafer bonding apparatus including: a first chuck in a processing chamber, the first chuck being configured to hold a first wafer, the first chuck including: a chuck body, and a tunable stiffness layer including a plurality of actuators, the plurality of actuators including a tunable stiffness material, the tunable stiffness layer being disposed below the chuck body; a controller configured to send control signals to one or more of the plurality of actuators; and a vacuum line on the chuck body configured to apply a vacuum pressure from a vacuum pump to the first wafer; and a second chuck in the processing chamber, the second chuck being configured to hold a second wafer to be bonded with the first wafer; and where a stiffness of the plurality of actuators is configured to change based on the control signals from the controller.

A holding mechanism includes a wafer holding section that holds a wafer under suction, and a frame support section that is disposed on the outer circumference of the wafer holding section and that supports a frame. The frame support section includes a permanent magnet.

A bonding apparatus includes a first holder, a first transforming device, a second holder, a second transforming device, a suction device and a control device. The first holder attracts and holds a first substrate from above. The first transforming device transforms the first substrate held by the first holder such that a central portion of the first substrate is protruded downwards. The second holder is provided under the first holder, and attracts and holds a second substrate, which is to be bonded to the first substrate, from below. The second transforming device transforms the second substrate held by the second holder such that a central portion of the second substrate is protruded upwards. The suction device generates different attracting forces in multiple division regions included in an attraction region of the second substrate. The control device controls the suction device.

A conveyance apparatus for conveying a substrate chuck includes a hand for supporting the substrate chuck, a main body for pivotally supporting the hand about a vertical axis and movable in horizontal and vertical directions, and a guiding portion for guiding pivotal motion of the hand. The hand includes hand distal end portions and a hand proximal end portion supported by the main body. An end surface of the hand proximal end portion facing the main body is formed in an arc shape of a circle centered about a vertical axis of a reference position between the hand distal end portions. The guiding portion includes a guiding surface that has a shape corresponding to the end surface of the hand proximal end portion and can slidably contact the end surface.

A processing apparatus includes a holding table including a holding surface that holds a back surface side of a substrate and a processing unit that processes the substrate held on the holding surface. The holding surface includes a holding section that holds a central region of the substrate, a discharge groove that surrounds the holding section, and an outer circumferential groove that surrounds the discharge groove and communicates with a suction source to hold under suction the substrate. The processing apparatus uses the discharge groove to collect processing swarf produced by the processing unit.

This disclosure teaches methods for making high-temperature superconducting striated tape combinations and the product high-temperature superconducting striated tape combinations. This disclosure describes an efficient and scalable method for aligning and bonding two superimposed high-temperature superconducting (HTS) filamentary tapes to form a single integrated tape structure. This invention aligns a bottom and top HTS tape with a thin intervening insulator layer with microscopic precision, and electrically connects the two sets of tape filaments with each other. The insulating layer also reinforces adhesion of the top and bottom tapes, mitigating mechanical stress at the electrical connections. The ability of this method to precisely align separate tapes to form a single tape structure makes it compatible with a reel-to-reel production process.

A die bonding method includes obtaining information about a quality grade of each die of a plurality of dies placed at a wafer, picking up a first die among the plurality of dies from the wafer, identifying a bonding location of a plurality of bonding locations from a substrate according to a quality grade of the first die, and bonding the first die to the bonding location of the substrate.