Provided is a substrate drying apparatus. The substrate drying apparatus may include an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space, a lower chamber body including an outlet configured to discharge the supercritical fluid outside the chamber space, and a stage configured to be loaded with a wet substrate and arranged in the chamber space, wherein the upper chamber body and the lower chamber body are configured such that the chamber space is closed by bringing the upper chamber body into contact with the lower chamber body, and the chamber space is opened by separating the upper chamber body from the lower chamber body, and the stage comprises a heater configured to heat the substrate and the supercritical fluid.

Disclosed is a substrate treating apparatus for performing a cleaning treatment on substrates. The apparatus includes an indexer block with an indexer robot, a treating block including a front face cleaning unit and a back face cleaning unit as treating units, and a reversing path block including a plurality of shelves on which substrates are placed, and having a reversing function. The indexer robot includes a guide rail, a base, an articulated arm, and a hand. The guide rail is positioned so as not to overlap a mount position of a substrate in the reversing path block.

A method reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. The method includes providing initial chucking voltages to each of the two electrodes, and measuring an initial current provided to at least a first electrode of the two electrodes. The method further includes initiating a process that affects a DC voltage of the substrate, then measuring a modified current provided to at least the first electrode, and determining, based at least on the initial current and the modified current, a modified chucking voltage for a selected one of the two electrodes, that will reduce chucking force imbalance across the substrate. The method also includes providing the modified chucking voltage to the selected one of the two electrodes.

Exemplary substrate processing systems may include a transfer region housing defining a transfer region fluidly coupled with a plurality of processing regions. A sidewall of the transfer region housing may define a sealable access for providing and receiving substrates. The systems may include a transfer apparatus having a central hub including a shaft extending at a distal end through the transfer region housing into the transfer region. The transfer apparatus may include a lateral translation apparatus coupled with an exterior surface of the transfer region housing, and configured to provide at least one direction of lateral movement of the shaft. The systems may also include an end effector coupled with the shaft within the transfer region. The end effector may include a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports in the transfer region.

A substrate transport apparatus including a frame, an upper arm rotatably mounted to the frame about a shoulder axis, a forearm rotatably mounted to the upper arm about an elbow axis where the forearm includes stacked forearm sections dependent from the upper arm through a common joint, and independent stacked end effectors rotatably mounted to the forearm, the forearm being common to the independent stacked end effectors, wherein at least end effector is mounted to the stacked forearm sections at a wrist axis, where the forearm is configured such that spacing between the independent stacked end effectors mounted to the stacked forearm sections is decoupled from a height build up between end effectors accommodating pass through instrumentation.

A conveying device, a conveying method, and an evaporation apparatus are provided. The conveying device comprises a carrying mechanism for carrying a substrate; and a fastening mechanism for fastening the substrate on the carrying mechanism in a mechanical manner. In the conveying device, the substrate is fastened on the carrying mechanism in a mechanical manner by the fastening mechanism. As compared with electrostatic fastening and adhesive fastening, this reduces damage to the substrate, increases the reliability for fastening the substrate, and makes it easy to receive and detach the substrate. (FIG. 1)

An end effector includes a body, a first tine, and a second tine. The body includes first, second, and third substrate support pads, the first substrate support pad defines a first height, the second substrate support pad defines a second height less than the first height, and the third substrate support pad defines a third height equal to the first height. The first tine includes fourth and fifth substrate support pads, the fourth substrate support pad defines a fourth height equal to the second height, and the fifth substrate support pad defines a fifth height equal to the first and third heights. The second tine includes sixth and seventh substrate support pads, the sixth substrate support pad defines a sixth height equal to the first, third, and fifth heights, the seventh substrate support pad defines a seventh height equal to the second and fourth heights.

Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

In a substrate processing apparatus, a cup part is moved in an up-down direction to cause a cup exhaust port to selectively overlap a first chamber exhaust port or a second chamber exhaust port. In the state in which the cup exhaust port overlaps the first chamber exhaust port, gas in the cup part is discharged through the cup exhaust port and the first chamber exhaust port by a first exhaust mechanism. In the state in which the cup exhaust port overlaps the second chamber exhaust port, the gas in the cup part is discharged through the cup exhaust port and the second chamber exhaust port by a second exhaust mechanism. In this way, an exhaust mechanism for exhausting gas from the cup part can be easily switched between the first exhaust mechanism and the second exhaust mechanism.

This wet etching method comprises rotating a substrate (W), supplying an etching chemical to a first surface (a surface for forming a device) of the rotating substrate, and supplying an etching inhibitor (DIW) to a second surface (a surface which is not used for forming a device) during the supplying the etching chemical to the substrate. The etching inhibitor moves past an edge (WE) of the substrate to swirl onto the first surface and reaches a first region extending from the edge of the substrate on the periphery of the first surface to a first radial position located radially inward from the edge on the first surface. Thus, it is possible to perform an excellent bevel etching treatment on the upper layer of the substrate having a two-layered film formed thereon.