A pusher that holds a substrate includes: a pusher body, and a plurality of seating members that is attached to the pusher body and on which a substrate is seated. Each of the plurality of seating members includes: a pedestal member including a seating portion on which the substrate is seated and a magnet disposed at a position different from the seating portion, and supported by the pusher body such that the position of the magnet is moved according to seating or leaving of the substrate; a seating sensor configured to detect movement of the magnet; and a magnetic member disposed to shield a portion between a movable region of the magnet and the seating sensor.

A heater assembly and method of controlling the heater assembly is provided. The heater assembly includes a resistive heater and a substrate, and the resistive heater comprises a plurality of heating zones disposed along a perimeter of the substrate. Each of the plurality of heating zones are independently controllable such that azimuthal temperature control of the heater assembly is provided. The plurality of resistive heating elements may be connected in series and have a common ground electrical lead. In the alternative, the plurality of resistive heating elements may each have a ground electrical lead and be isolated from each other.

A liquid treatment apparatus includes: a substrate holder for holding a substrate; a discharge nozzle for discharging a treatment liquid onto the substrate; a liquid supply pipe for supplying the treatment liquid from a treatment liquid storage source to the discharge nozzle; a gas pipe that encompasses the liquid supply pipe and through which an inert gas for adjusting the temperature of the treatment liquid flows in a space between the gas pipe and the liquid supply pipe; a processing container in which the substrate holder, the discharge nozzle, the liquid supply pipe, and the gas pipe are provided; and an atmosphere gas supply part for supplying an atmosphere gas into the processing container. The gas pipe is provided so that an extension portion between an upstream end inside the processing container and an encompassing portion is folded back inside the processing container in a plan view.

Embodiments of the present disclosure generally relate to an apparatus for improving the film thickness on a substrate when using a heated substrate support. A cover plate to be placed over the top surface of a heated substrate support is disclosed. The cover plate includes a pocket formed in the middle thereof for the placement of a substrate. The cover plate may include a variety of features including a plurality of dimples, a plurality of radially disposed grooves, a plurality of annular grooves, lift pin holes, pin slots, and gas exhaust holes.

An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

A film deposition method uses a film deposition apparatus including a source gas supply part and a cleaning gas supply part. In the method, a source gas is adsorbed on a substrate by supplying the source gas from the source gas supply part without supplying a purge gas into the cleaning gas supply part. A reaction product is deposited on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas supply part.

A system for assembling fields from a source substrate onto a second substrate. The source substrate includes fields. The system further includes a transfer chuck that is used to pick at least four of the fields from the source substrate in parallel to be transferred to the second substrate, where the relative positions of the at least four of the fields is predetermined.

In an embodiment, a system includes: a tool port of a semiconductor processing tool; a processing port with an internal processing port location and an external processing port location; a robot configured to move a die vessel between the internal processing port location and the tool port; and an actuator configured to move the die vessel between the internal processing port location and the external processing port location.

A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.

Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.