The present disclosure provides a method for manufacturing a semiconductor structure. The method includes providing a substrate having a first top surface; forming an isolation region in the substrate to surround an active region; forming a recess in the active region; disposing a first conductive material within the recess to form a buried power line and a buried signal line; forming a first circuit layer and a second circuit layer on the first top surface of the substrate, wherein the first circuit layer covers the buried power line and the buried signal line, and the second circuit layer is separated from the first circuit layer; and forming a cell capacitor over the first circuit layer.

A method of fabricating a metal mask includes receiving a conductive substrate with a first surface, a second surface opposite to the first surface, a third surface connecting the first and second surfaces, and a fourth surface opposite to the third surface and connecting the first and second surfaces. The method further includes forming trenches in a direction from the first surface to the second surface and protrusions in the conductive substrate. The trenches and the protrusions are alternately arranged. The method further includes filling the trenches with an insulation material covering a first area of the protrusions, forming a metal layer on the conductive substrate overlying a second area different from the first area of the protrusions, removing the insulation material, and removing the conductive substrate. The metal layer becomes a metal mask with a three-dimensional structure including strip-shaped structures.

In vertically stacked device structures, a buried interconnect and bottom contacts can be formed, thereby allowing connections to be made to device terminals from both below and above the stacked device structures. Techniques herein include a structure that enables electrical access to each independent device terminal of multiple devices, stacked on top of each other, without interfering with other devices and the local connections that are needed.

Semiconductor devices and methods of forming the same include forming a buried power rail in a substrate, having a first dielectric liner of a first thickness separating the buried power rail from the substrate. An isolation structure is formed over the buried power rail, having a second dielectric liner of a second thickness, greater than the first thickness, separating the isolation structure from the substrate. A first transistor device is formed on the substrate. The first transistor device has a first width. A second transistor device is formed above the first transistor device, and has a second width smaller than the first width. A conductive contact is formed to the buried power rail.

In some embodiments, the present disclosure relates to an integrated chip having an inter-tier interconnecting structure having horizontal components, which is arranged within a semiconductor substrate and configured to electrically couple a first device tier to a second device tier. The integrated chip has a first device tier with a first semiconductor substrate. A first inter-tier interconnecting structure is disposed inside the first semiconductor substrate. The first inter-tier interconnecting structure has a first segment extending in a first direction and a second segment protruding outward from a sidewall of the first segment in a second direction substantially perpendicular to the first direction. A second device tier is electrically coupled to the first device tier by the first inter-tier interconnecting structure.

A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

Some embodiments include a method of forming an arrangement. A first tier is formed to include CMOS circuitry. A second tier is formed to include an assembly which has first and second sets of memory cells on opposing sides of a coupling region. A support material is adjacent the first and second sets of the memory cells, and an intervening material is adjacent the support material. The support material has a different composition than the intervening material. A conductive interconnect extends through the intervening material. An upper surface of the assembly is polished to reduce an overall height of the assembly. The support material provides support during the polishing to protect the memory cells from being eroded during the polishing. The conductive interconnect of the second tier is coupled with the CMOS circuitry of the first tier. Some embodiments include multitier arrangements.

A method of manufacturing a semiconductor structure includes: forming a trench in a back side of a substrate; depositing a dopant on surfaces of the trench; forming a shallow trench isolation (STI) structure in a top side of the substrate opposite the trench; forming a deep well in the substrate; out-diffusing the dopant into the deep well and the substrate; forming an N-well and a P-well in the substrate; and filling the trench with a conductive material.

A 3D semiconductor device including: a first level including a plurality of first metal layers; a second level, where the second level overlays the first level, where the second level includes at least one single crystal silicon layer, where the second level includes a plurality of transistors, where each transistor of the plurality of transistors includes a single crystal channel, where the second level includes a plurality of second metal layers, where the plurality of second metal layers include interconnections between the transistors of the plurality of transistors, and where the second level is overlaid by a first isolation layer; and a connective path between the plurality of transistors and the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, and where the via includes contact with at least one of the plurality of transistors.

An LDMOS includes a semiconductor substrate. A well is disposed within the semiconductor substrate. A body region is disposed within the well. A first gate electrode is disposed on the semiconductor substrate. A source electrode is disposed at one side of the first gate electrode. The source electrode includes a source contact area and numerous vias. The vias connect to the source contact area. The vias extend into the semiconductor substrate. A first drain electrode is disposed at another side of the first gate electrode and is opposed to the source electrode.