An integrated device that includes a substrate, a circuit region located over the substrate, a design keep out region located over the substrate, and a periphery structure located over the substrate. The design keep out region laterally surrounds the circuit region. The periphery structure includes a first plurality of interconnects that laterally surrounds the design keep out region. The periphery structure is configured to operate as an electrical seal ring and a mechanical crack stop.

An integrated device that includes a substrate, a circuit region located over the substrate, a design keep out region located over the substrate, and a periphery structure located over the substrate. The design keep out region laterally surrounds the circuit region. The periphery structure includes a first plurality of interconnects that laterally surrounds the design keep out region. The periphery structure is configured to operate as an electrical seal ring and a mechanical crack stop.

A semiconductor device includes: a substrate; an ion-implanted silicon layer disposed in the substrate; a first insulator layer disposed over the ion-implanted silicon layer; an active device disposed over the first insulator layer; and a conductive via configured to penetrate the first insulator layer for coupling the ion-implanted silicon layer and the active device.

A semiconductor device includes: a substrate; an ion-implanted silicon layer disposed in the substrate; a first insulator layer disposed over the ion-implanted silicon layer; an active device disposed over the first insulator layer; and a conductive via configured to penetrate the first insulator layer for coupling the ion-implanted silicon layer and the active device.

A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming a first metal layer on top of first level; forming a second metal layer on top of the first metal layer; forming at least one second level above the second metal layer; performing a first lithography step on the second level; forming a third level on top of the second level; performing a second lithography step on the third level; perform processing steps to form first memory cells within the second level and second memory cells within the third level, where first memory cells include at least one second transistor, and the second memory cells include at least one third transistor; and deposit a gate electrode for the second and the third transistors simultaneously.

A semiconductor device, the device including: a first silicon layer including a first single crystal silicon; a first metal layer disposed over the first single crystal silicon layer; a second metal layer disposed over the first metal layer; a first level including a plurality of transistors, the first level disposed over the second metal layer, where the plurality of transistors include a second single crystal silicon; a third metal layer disposed over the first level; a fourth metal layer disposed over the third metal layer, where the fourth metal layer is aligned to the first metal layer with a less than 40 nm alignment error; and a via disposed through the first level, where the fourth metal layer provides a global power distribution, and where a typical thickness of the fourth metal layer is at least 50% greater than a typical thickness of the third metal.

A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.

Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a semiconductor substrate having a device substrate overlying a handle substrate and an insulator layer disposed between the device substrate and the handle substrate. A gate electrode overlies the device substrate between a drain region and a source region. A conductive via extends through the device substrate and the insulator layer to contact the handle substrate. A first isolation structure is disposed within the device substrate and comprises a first isolation segment disposed laterally between the gate electrode and the conductive via. A contact region is disposed within the device substrate between the first isolation segment and the conductive via. A conductive gate electrode directly overlies the first isolation segment and is electrically coupled to the contact region.

A 3D semiconductor device including: a first single crystal layer including a plurality of first transistors and a first metal layer, where a second metal layer is disposed atop the first metal layer; a plurality of logic gates including the first metal layer and first transistors; a plurality of second transistors disposed atop the second metal layer; a plurality of third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, where the memory array includes at least four memory mini arrays, where each of the mini arrays includes at least two rows by two columns of memory cells, where each memory cell includes one of the second transistors or one of the third transistors, and where one of the second transistors is self-aligned to one of the third transistors, being processed following a same lithography step.

A semiconductor device structure, along with methods of forming such, are described. The structure includes a semiconductor fin including a first surface, a second surface opposite the first surface, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The semiconductor device structure further includes a gate electrode layer disposed adjacent the first, third, and fourth surfaces of the semiconductor fin, a first source/drain epitaxial feature in contact with the semiconductor fin, and a first inner spacer disposed between the first source/drain epitaxial feature and the gate electrode layer. The first inner spacer is in contact with the first source/drain epitaxial feature, and the first inner spacer comprises a first material. The semiconductor device structure further includes a first spacer in contact with the first inner spacer, and the first spacer comprises a second material different from the first material.