A semiconductor device includes a lower insulating film that includes a first and second trenches on a substrate, a first wiring in the first trench, a second wiring in the second trench, a capping insulating film including an insulating recess portion and an insulating liner portion, an upper insulating film on the capping insulating film, and an upper contact that penetrates the capping insulating film and connects to the first wiring, The insulating recess portion is in the second trench and the insulating liner portion extends along an upper surface of the lower insulating film. The upper contact includes a contact recess portion in the first trench, an extended portion connected to the contact recess portion, and a plug portion connected to the extended portion inside the upper insulating film. A width of the extended portion is greater than a width of the plug portion.

A method for manufacturing a semiconductor device includes: a first insulating film forming step of forming a first insulating film in a transistor having a structure in which a source and a drain raised in a fin shape are covered with a gate; a sacrifice film forming step of forming a sacrifice film; a hard mask pattern forming step of forming a hard mask film having a desired pattern; a first opening forming step of forming a first opening; a second insulating film forming step of forming a second insulating film made of a material different from the first insulating film, in the first opening; a second opening forming step of forming a second opening by removing the sacrifice film, after the second insulating film forming step; and a contact plug forming step of forming a contact plug in the second opening.

A method of forming a semiconductor device includes forming a source/drain region on a substrate, depositing a metal-rich metal silicide layer on the source/drain region, depositing a silicon-rich metal silicide layer on the metal-rich metal silicide layer, and forming a contact plug on the silicon-rich metal silicide layer. This disclosure also describes a semiconductor device including a fin structure on a substrate, a source/drain region on the fin structure, a metal-rich metal silicide layer on the source/drain region, a silicon-rich metal silicide layer on the metal-rich metal silicide layer, and a contact plug on the silicon-rich metal silicide layer.

A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

Semiconductor devices including air spacers formed in a backside interconnect structure and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure; and a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a first dielectric layer on the backside of the first transistor structure; a first via extending through the first dielectric layer, the first via being electrically coupled to a source/drain region of the first transistor structure; a first conductive line electrically coupled to the first via; and an air spacer adjacent the first conductive line in a direction parallel to a backside surface of the first dielectric layer.

An interconnection structure, along with methods of forming such, are described. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer. The conductive layer includes a first portion and a second portion adjacent the first portion, and the second portion of the conductive layer is disposed over the first conductive feature. The structure further includes a first barrier layer in contact with the first portion of the conductive layer, a second barrier layer in contact with the second portion of the conductive layer, and a support layer in contact with the first and second barrier layers. An air gap is located between the first and second barrier layers, and the dielectric layer and the support layer are exposed to the air gap.

The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of creating at least one trench in a substrate; depositing a conductive material to partially fill the trench; and forming an insulative piece in the trench and extending into the conductive material.

A semiconductor structure includes a molding, a device in the molding, and a RDL over the device and the molding. The RDL includes a first portion directly over a surface of the molding, and a second portion directly over a surface of the device. A bottom surface of the first portion is in contact with the surface of the molding, and a bottom surface of the second portion is in contact with the surface of the device. The bottom surface of the first portion of the RDL and the bottom surface of the second portion of the RDL are at different levels and misaligned from each other. A thickness of the first portion is greater than a thickness of the second portion.

A semiconductor structure includes a molding, a device in the molding, and a RDL over the device and the molding. The RDL includes a first portion directly over a surface of the molding, and a second portion directly over a surface of the device. A bottom surface of the first portion is in contact with the surface of the molding, and a bottom surface of the second portion is in contact with the surface of the device. The bottom surface of the first portion of the RDL and the bottom surface of the second portion of the RDL are at different levels and misaligned from each other. A thickness of the first portion is greater than a thickness of the second portion.

A memory device and a method for manufacturing the memory device are provided. The memory device includes a substrate, a plurality of first gate structures, a first dielectric layer, a second dielectric layer, a third dielectric layer and a contact plug. The first gate structures are formed on an array region of the substrate. The first dielectric layer is formed on top surfaces and sidewalls of the first gate structures. The second dielectric layer is formed on the first dielectric layer and in direct contact with the first dielectric layer. The second dielectric layer and the first dielectric layer are made of the same material. The third dielectric layer is formed between the first gate structures and defines a plurality of contact holes exposing the substrate. The contact plug fills the contact holes.