An array substrate and a method for fabricating the same, and a display device are disclosed. The array substrate comprises: a thin film transistor comprising an active region, a source/drain and a gate; a shading part arranged below the active region and made from an electrically conductive material; and a storage capacitor comprising a first plate and a second plate which are spaced apart and arranged oppositely. The first plate is arranged in a same layer as the shading part, and the second plate is arranged in a same layer as any one of the active region, the source/drain and the gate.

Provided is a method of manufacturing an electronic device, the method including: preparing first mother glass and second mother glass; forming, on the first mother glass, a plurality of device cells partially connected to the first mother glass through a plurality of first separating portions; patterning a device circuit on each of the plurality of device cells; forming, on the second mother glass, a plurality of cover cells partially connected to the second mother glass through a plurality of second separating portions; forming a plurality of electronic devices by laminating the first mother glass and the second mother glass together such that the plurality of device cells are respectively aligned to the plurality of cover cells; and separating the plurality of electronic devices from the first mother glass and the second mother glass by cutting the plurality of first separating portions and the plurality of second separating portions.

The present disclosure provides a TFT, a manufacturing method thereof, an array substrate and a display device. The TFT includes an N-type metal oxide TFT and a P-type metal oxide TFT. The manufacturing method includes a step of forming an active layer of the N-type metal oxide TFT and an active layer of a P-type metal oxide TFT on a base substrate through a single patterning process.

An LCD device includes a TFT array substrate, a liquid crystal layer, and a plurality of photo spacers. The photo spacers are located inside the liquid crystal layer. The TFT array substrate includes a pixel electrode layer and an alignment layer. The alignment layer is arranged on the of TFT array substrate on the side near the liquid crystal layer. The pixel electrode layer is arranged on the alignment layer on the side far away from liquid crystal layer; the alignment layer includes a plurality of contact portion. The bottom of the photo spacers are holding with the contact portions. A plurality of block portion is adjacent to the contact portions. The block portion is a protrusion formed toward the color filter substrate with respect to the contact portion, so that the displacement of the photo spacers on the TFT array substrate can be limited.

An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.

The invention provides a manufacturing method of a TFT substrate. The manufacturing method includes: disposing a groove on a base; filling a metal material in the groove to form a first metal layer, the first metal layer acting as a gate of the TFT substrate; disposing an insulating layer on the first metal layer and the base; sequentially disposing a semiconductor material layer and a second metal layer on the insulating layer, the second metal layer forming a drain and a source of the TFT substrate, and the semiconductor material layer being disposed between the drain and the gate. The invention further provides a liquid crystal display panel and a TFT substrate. By the above means, the invention can reduce the thickness of the TFT substrate, which is beneficial to the realization of ultra-thin liquid crystal display panel and can improve display panel of the liquid crystal display panel.

A TFT substrate includes a base plate on which first and second gate electrodes respectively corresponding to first and second TFTs are formed. A gate insulation layer, a semiconductor layer, and an etch stop layer are sequentially formed on the base plate and the first and second electrodes. A single photolithographic process is conducted simultaneously on the gate insulation layer, the semiconductor layer, and the etch stop layer with the same gray tone mask to form separate semiconductor portions for the two TFTs and also form contact holes in the etch stop layer and the gate insulation layer to receive sources and drains of the two TFTs to be deposited therein and in contact with the two semiconductor portions.

The present invention provides a TFT substrate manufacturing method, which first forms a pixel electrode, a data line, and source/drain terminals on the base plate and then forms a channel protection layer and an oxide semiconductor layer; or alternatively first forming a buffer layer on a base plate to prevent characteristics of a TFT from being affected by direct contact between an oxide semiconductor layer and the base plate, and then forming the oxide semiconductor layer directly after formation of source/drain terminals so as to save one etch stopper layer, thus preventing damages induced in the oxide semiconductor layer by an etching operation of the source/drain terminals; and further, through forming a protective layer that covers a surface of a gate terminal to protect the gate terminal from corrosion at the same time of forming a common electrode, formation of an insulation protective layer can be saved so as to greatly simplify the manufacturing process and improve reliability of a TFT substrate.

An array substrate and a manufacturing method. The array substrate includes a substrate, multiple gate and data lines, and multiple common electrode lines parallel with the gate lines. The substrate includes a first surface. Among two adjacent gate lines and data lines, one pixel region is defined. The array substrate further includes a thin-film transistor, a common electrode, a pixel electrode and a storage capacitor disposed in the pixel region. The transistor includes a gate electrode, the first insulation layer, a channel layer, a source and drain electrode. The storage capacitor includes a first and a second conductive portion. The gate electrode, the common electrode line, the common electrode and the first conductive portion are disposed on the first surface. The channel layer, the source and drain electrode, the second conductive portion and the pixel electrode are disposed on the first insulation layer. The pixel electrode is a metal layer.

The present disclosure provides a circuit for processing a voltage of a pixel electrode and a display apparatus. The circuit for processing a voltage of a pixel electrode comprises: a first input terminal configured to input an original voltage of the pixel electrode; a second input terminal configured to input a voltage of a common electrode; and an output terminal configured to output a processed voltage of the pixel electrode, wherein the circuit for processing a voltage of a pixel electrode is configured to superimpose the voltage of the common electrode on the original voltage of the pixel electrode, to acquire a voltage which is stable with respect to the voltage of the common electrode as the processed voltage of the pixel electrode.