A sample holder includes a base comprising a support structure and a printed circuit board (PCB) in contact with the base. The PCB includes: a dielectric; a front-surface ground (GND) formed on a front surface of the dielectric; a back-surface GND formed on a back surface of the dielectric; a through hole penetrating from the front-surface GND to the back-surface GND, the through hole in which a chip is disposed, and a conductor that electrically connects the front-surface GND and the back-surface GND on an end face of the through hole. At least a part of the base below the through hole has a cavity. The support structure that supports a surface of the chip and is electrically connected to the base. The support structure is disposed in the cavity.

A semiconductor device, including an insulated circuit substrate that has a base plate, a resin layer disposed on a front surface of the base plate, and a circuit pattern disposed on a front surface of the resin layer; and a semiconductor chip that is rectangular in a plan view of the semiconductor device and is bonded to a front surface of the circuit pattern in such a manner that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by at least a predetermined distance. Both the predetermined distance and a thickness of the circuit pattern are greater than or equal to 0.1 of a length of one side of the semiconductor chip.

A semiconductor module includes a base plate made of a metal, an insulating frame provided on a peripheral edge portion of the base plate, a lead made of a metal and provided on the frame, and a semiconductor device mounted on the base plate in a space surrounded by the frame, wherein the frame is fixed to the base plate by a bonding material containing silver, the frame has concave portions formed in an inner portion which is a corner portion on a space side and an outer portion which is a corner portion on a side opposite to the inner portion in a surface thereof which faces the base plate, and the concave portions are filled with a coating material.

Semiconductor packages described herein include a thermal capacitor designed to absorb transient heat pulses from a power semiconductor die and subsequently release the transient heat pulses to a surrounding environment, and/or a recessed pad feature. Corresponding methods of production are also described.

In one embodiment, a base die apparatus includes a conformal power delivery structure comprising a first electrically conductive layer defining one or more recesses, and a second electrically conductive layer at least partially within the recesses of the first electrically conductive layer and having a lower surface that generally conforms with the upper surface of the first electrically conductive layer. The conformal power delivery structure also includes a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another. The conformal power delivery structure may be connected to connection pads of the base die apparatus, e.g., to provide power delivery to integrated circuit (IC) chips connected to the base die apparatus. The base die apparatus also includes bridge circuitry to connect IC chips with one another.

Technologies for conformal power delivery structures near high-speed signal traces are disclosed. In one embodiment, a dielectric layer may be used to keep a power delivery structure spaced apart from high-speed signal traces, preventing deterioration of signals on the high-speed signal traces due to capacitive coupling to the power delivery structure.

In one embodiment, an apparatus includes a first die with voltage regulator circuitry and a second die with logic circuitry. The apparatus further includes an inductor, a capacitor, and a conformal power delivery structure on the top side of the apparatus, where the voltage regulator circuitry is connected to the logic circuitry through the inductor, the capacitor, and the conformal power delivery structure. The conformal power delivery structure includes a first electrically conductive layer defining one or more recesses, a second electrically conductive layer at least partially within the recesses of the first electrically conductive layer and having a lower surface that generally conforms with the upper surface of the first electrically conductive layer, and a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another.

In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.

A semiconductor device includes a metal plate; a sidewall member surrounding a periphery of a space above the metal plate; a circuit board provided on the metal plate; a semiconductor chip provided on the circuit board; a first wire connecting the semiconductor chip and an interconnect part of the circuit board; a first resin member covering a bonding portion between the semiconductor chip and the first wire; and a second resin member provided in the space, the second resin member covering an upper surface of the metal plate, the circuit board, the first resin member, and the first wire. A Young's modulus of the first resin member is greater than a Young's modulus of the second resin member. A volume of the second resin member is greater than a volume of the first resin member.

A method can be used for manufacturing a metal substrate structure for a semiconductor power module. A plurality of terminals are welded to a metal top layer. After the welding, a dielectric layer is coupled between the metal top layer and a metal bottom layer. The dielectric can be laminated or molded, as examples.