H01L23/20

3D printed hermetic package assembly and method

A method is provided. The method includes one or more of removing existing ball bonds from an extracted die, placing the extracted die into a recess of a hermetic substrate, the extracted die having a centered orientation in the recess, and applying a side fill compound into the recess between the extracted die and the hermetic substrate. The method also includes 3D printing, by a 3D printer, a plurality of bond connections between die pads of the extracted die and first bond pads of the hermetic substrate in order to create a 3D printed die substrate, and 3D printing a hermetic encapsulation over the die, the side fill compound, and the 3D printed bond connections in order to create a hermetic assembly. The extracted die includes a fully functional semiconductor die removed from a previous package. The hermetic substrate includes the first bond pads coupled to second bond pads.

3D printed hermetic package assembly and method

A method is provided. The method includes one or more of removing existing ball bonds from an extracted die, placing the extracted die into a recess of a hermetic substrate, the extracted die having a centered orientation in the recess, and applying a side fill compound into the recess between the extracted die and the hermetic substrate. The method also includes 3D printing, by a 3D printer, a plurality of bond connections between die pads of the extracted die and first bond pads of the hermetic substrate in order to create a 3D printed die substrate, and 3D printing a hermetic encapsulation over the die, the side fill compound, and the 3D printed bond connections in order to create a hermetic assembly. The extracted die includes a fully functional semiconductor die removed from a previous package. The hermetic substrate includes the first bond pads coupled to second bond pads.

POWER MODULE

The power module includes: an insulating substrate having an upper surface on which a semiconductor element is mounted; a base plate joined to a lower surface of the insulating substrate; a case member surrounding the insulating substrate and adhered to the base plate; a sealing resin provided in a region surrounded by the base plate and the case member, so as to seal the insulating substrate; and a holding plate projecting from an inner wall of the case member to above an outer peripheral portion of the insulating substrate, the holding plate being fixed to the inner wall, the holding plate being in contact with the sealing resin.

Printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer

A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 10.sup.6 Ohm-cm.

Printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer

A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 10.sup.6 Ohm-cm.

Repackaged reconditioned die method and assembly

A method is provided. The method includes one or more of removing one or more existing ball bonds from an extracted die, reconditioning die pads of the extracted die to create a reconditioned die, securing the reconditioned die within a cavity of a new package base, providing a plurality of bond connections interconnecting the reconditioned die pads and package leads or downbonds of the new package base, applying an encapsulating compound over the reconditioned die and the plurality of bond connections to create an assembled package base, and securing a lid to the new package base. Reconditioning includes applying a plurality of metallic layers to the die pads of the extracted die, the extracted die including a fully functional semiconductor die removed from a previous package. The encapsulating compound is configured to exhibit low thermal expansion.

Repackaged reconditioned die method and assembly

A method is provided. The method includes one or more of removing one or more existing ball bonds from an extracted die, reconditioning die pads of the extracted die to create a reconditioned die, securing the reconditioned die within a cavity of a new package base, providing a plurality of bond connections interconnecting the reconditioned die pads and package leads or downbonds of the new package base, applying an encapsulating compound over the reconditioned die and the plurality of bond connections to create an assembled package base, and securing a lid to the new package base. Reconditioning includes applying a plurality of metallic layers to the die pads of the extracted die, the extracted die including a fully functional semiconductor die removed from a previous package. The encapsulating compound is configured to exhibit low thermal expansion.

Printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer

A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die is an integrated passive die (IPD) without a silicon substrate layer. A protective layer is disposed over the IPD, wherein the protective layer has a thermal conductivity between 2 watts per meter Kelvin (W/mK) and 6600 W/mK and an electrical resistivity of greater than 10.sup.6 Ohm-cm.

Printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer

A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die is an integrated passive die (IPD) without a silicon substrate layer. A protective layer is disposed over the IPD, wherein the protective layer has a thermal conductivity between 2 watts per meter Kelvin (W/mK) and 6600 W/mK and an electrical resistivity of greater than 10.sup.6 Ohm-cm.

INTEGRATED CIRCUIT PACKAGES TO MINIMIZE STRESS ON A SEMICONDUCTOR DIE

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.