An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

A semiconductor device includes a package substrate, and a first die group bonded onto the package substrate. The first die group characterized by a first thickness. The semiconductor device also has a second die group bonded onto the package substrate. The second die group characterized by a second thickness. The semiconductor device further includes a carrier substrate disposed on the first die group. The carrier substrate is characterized by a third thickness that is a function of a difference between the first thickness and the second thickness. A molding compound material is disposed on the package substrate and covers the first die group and the second die group. The molding compound material includes a cavity between the first die group and the second die group.

A semiconductor device includes a package substrate, and a first die group bonded onto the package substrate. The first die group characterized by a first thickness. The semiconductor device also has a second die group bonded onto the package substrate. The second die group characterized by a second thickness. The semiconductor device further includes a carrier substrate disposed on the first die group. The carrier substrate is characterized by a third thickness that is a function of a difference between the first thickness and the second thickness. A molding compound material is disposed on the package substrate and covers the first die group and the second die group. The molding compound material includes a cavity between the first die group and the second die group.

In described examples, a MEMS device is enclosed within a sealed package including nonmetal oxide gasses at levels greater than 1% by volume. In at least one example, the MEMS device is protected against premature failure from various causes, including charging, particle growth and stiction by moieties of the nonmetal oxide gasses reacting with various exposed surfaces within the package of the MEMS device and/or the adsorbed water layers on said surfaces.

In described examples, a MEMS device is enclosed within a sealed package including nonmetal oxide gasses at levels greater than 1% by volume. In at least one example, the MEMS device is protected against premature failure from various causes, including charging, particle growth and stiction by moieties of the nonmetal oxide gasses reacting with various exposed surfaces within the package of the MEMS device and/or the adsorbed water layers on said surfaces.

Antenna aperture tuning circuitry includes a first signal path and a second signal path coupled in parallel between an antenna radiating element and ground. A first LC resonator and a second LC resonator are each coupled between the first signal path and ground. The first LC resonator and the second LC resonator are electromagnetically coupled such that a coupling factor between the first LC resonator and the second LC resonator is between about 1.0% and 40.0%. A third LC resonator and a fourth LC resonator are each coupled between the second signal path and ground. The third LC resonator and the fourth LC resonator are electromagnetically coupled such that a coupling factor between the third LC resonator and the fourth LC resonator is between about 1.0% and 40.0%.

Antenna aperture tuning circuitry includes a first signal path and a second signal path coupled in parallel between an antenna radiating element and ground. A first LC resonator and a second LC resonator are each coupled between the first signal path and ground. The first LC resonator and the second LC resonator are electromagnetically coupled such that a coupling factor between the first LC resonator and the second LC resonator is between about 1.0% and 40.0%. A third LC resonator and a fourth LC resonator are each coupled between the second signal path and ground. The third LC resonator and the fourth LC resonator are electromagnetically coupled such that a coupling factor between the third LC resonator and the fourth LC resonator is between about 1.0% and 40.0%.

A bonded structure can include a first element having a first interface feature and a second element having a second interface feature. The first interface feature can be bonded to the second interface feature to define an interface structure. A conductive trace can be disposed in or on the second element. A bond pad can be provided at an upper surface of the first element and in electrical communication with the conductive trace. An integrated device can be coupled to or formed with the first element or the second element.

A method is provided. The method includes removing an extracted die including an original ball bond from a previous packaged integrated circuit, bonding the extracted die to an interposer to create a remapped extracted die, 3D printing one or more first bond connections between one or more original bond pads of the extracted die and one or more first bond pads of the interposer, securing the remapped extracted die to a package base, and 3D printing one or more second bond connections between one or more second bond pads of the interposer and one or more package leads or downbonds of the package base. The one or more first and second bond connections conform to the shapes and surfaces of the extracted die, the interposer, and the package base.

In described examples, a MEMS device is enclosed within a sealed package including nonmetal oxide gasses at levels greater than 1% by volume. In at least one example, the MEMS device is protected against premature failure from various causes, including charging, particle growth and stiction by moieties of the nonmetal oxide gasses reacting with various exposed surfaces within the package of the MEMS device and/or the adsorbed water layers on said surfaces.