The present disclosure relates to redistribution layer structures useful in semiconductor substrate packages, semiconductor package structures, and chip structures. In an embodiment, a redistribution layer structure includes a dielectric layer, an anti-plating layer, and a conductive material. The dielectric layer defines one or more trenches. The conductive material is disposed in the trench(es), and the anti-plating layer is disposed on a surface of the dielectric layer.

A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.

A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.

A method for assembling a packaged integrated circuit is provided. The method includes placing a die into a cavity of a package base, securing the die to the package base with a die attach adhesive, printing a bond connection between a die pad of the die and a lead of the package base or a downbond, and sealing a package lid to the package base.

A method for assembling a packaged integrated circuit is provided. The method includes placing a die into a cavity of a package base, securing the die to the package base with a die attach adhesive, printing a bond connection between a die pad of the die and a lead of the package base or a downbond, and sealing a package lid to the package base.

A semiconductor package includes a package substrate, the package substrate including a conductive plate, an insulating plate on the conductive plate, the insulating plate including a mounting region and a peripheral region surrounding the mounting region, and at least one capillary channel in the peripheral region, a semiconductor chip on the mounting region of the insulating plate, and a molding member on the insulating plate to cover the semiconductor chip, a portion of the molding member being in the at least one capillary channel.

A semiconductor package includes a package substrate, the package substrate including a conductive plate, an insulating plate on the conductive plate, the insulating plate including a mounting region and a peripheral region surrounding the mounting region, and at least one capillary channel in the peripheral region, a semiconductor chip on the mounting region of the insulating plate, and a molding member on the insulating plate to cover the semiconductor chip, a portion of the molding member being in the at least one capillary channel.

Air cavity packages and methods for producing air cavity packages containing sintered bonded components, multipart window frames, and/or other unique structural features are disclosed. In one embodiment, a method for fabricating an air cavity package includes the step or process of forming a first metal particle-containing precursor layer between a base flange and a window frame positioned over the base flange. A second metal particle-containing precursor layer is further formed between the base flange and a microelectronic device positioned over the base flange. The metal particle-containing precursor layers are sintered substantially concurrently at a maximum processing temperature less than melt point(s) of metal particles within the layers to produce a first sintered bond layer from the first precursor layer joining the window frame to the base flange and to produce a second sintered bond layer from the second precursor layer joining the microelectronic device to the base flange.

Air cavity packages and methods for producing air cavity packages containing sintered bonded components, multipart window frames, and/or other unique structural features are disclosed. In one embodiment, a method for fabricating an air cavity package includes the step or process of forming a first metal particle-containing precursor layer between a base flange and a window frame positioned over the base flange. A second metal particle-containing precursor layer is further formed between the base flange and a microelectronic device positioned over the base flange. The metal particle-containing precursor layers are sintered substantially concurrently at a maximum processing temperature less than melt point(s) of metal particles within the layers to produce a first sintered bond layer from the first precursor layer joining the window frame to the base flange and to produce a second sintered bond layer from the second precursor layer joining the microelectronic device to the base flange.

Air cavity packages and methods for producing air cavity packages containing sintered bonded components, multipart window frames, and/or other unique structural features are disclosed. In one embodiment, a method for fabricating an air cavity package includes the step or process of forming a first metal particle-containing precursor layer between a base flange and a window frame positioned over the base flange. A second metal particle-containing precursor layer is further formed between the base flange and a microelectronic device positioned over the base flange. The metal particle-containing precursor layers are sintered substantially concurrently at a maximum processing temperature less than melt point(s) of metal particles within the layers to produce a first sintered bond layer from the first precursor layer joining the window frame to the base flange and to produce a second sintered bond layer from the second precursor layer joining the microelectronic device to the base flange.