An SSD with a package optimized for semiconductor wafers is configured by thinning a plurality of undiced wafers and stacking the wafers. The wafers are connected to each other by TSV. A subset of the wafers include memory circuits. One of the wafer not in the subset includes peripheral circuits. A casing houses the wafers.

A power semiconductor module arrangement includes: a substrate arranged in or forming a ground surface of a housing having sidewalls; at least one semiconductor body arranged on the substrate; a first layer partly filling the housing and completely covering the substrate and the at least one semiconductor body arranged thereon; and a second layer arranged adjacent to the first layer. The first layer is a liquid or gel-like layer. The second layer is a solid or gel-like layer. The first layer is arranged between the substrate and the second layer. The second layer is arranged distant from a top of the housing.

An electrical module includes at least one electrical component and at least one hollow body which is filled or can be filled with a medium, particularly a fluid. The hollow body exerts a pressing force, dependent on the prevailing internal pressure in the interior of the hollow body, onto the at least one component of the module. A method for clamping an electrical module is also provided.

An electrical module includes at least one electrical component and at least one hollow body which is filled or can be filled with a medium, particularly a fluid. The hollow body exerts a pressing force, dependent on the prevailing internal pressure in the interior of the hollow body, onto the at least one component of the module. A method for clamping an electrical module is also provided.

A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned integrated passive die (IPD) attached to the printed circuit substrate. A protective layer is disposed over the thinned IPD to protect passive devices integrated within the thinned IPD, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 10.sup.3 Ohm-cm.

A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned integrated passive die (IPD) attached to the printed circuit substrate. A protective layer is disposed over the thinned IPD to protect passive devices integrated within the thinned IPD, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 10.sup.3 Ohm-cm.

A module arrangement for power semiconductor devices, including one or more power semiconductor modules, wherein the one or more power semiconductor modules include a substrate with a first surface and a second surface being arranged opposite to the first surface, wherein the substrate is at least partially electrically insulating, wherein a conductive structure is arranged at the first surface of the substrate, wherein at least one power semiconductor device is arranged on the conductive structure and electrically connected thereto, wherein the one or more modules includes an inner volume for receiving the at least one power semiconductor device which volume is hermetically sealed from its surrounding by a module enclosure, wherein the module arrangement includes an arrangement enclosure at least partly defining a volume for receiving the one or more modules, and wherein the arrangement enclosure seals covers the volume.

A module arrangement for power semiconductor devices, including one or more power semiconductor modules, wherein the one or more power semiconductor modules include a substrate with a first surface and a second surface being arranged opposite to the first surface, wherein the substrate is at least partially electrically insulating, wherein a conductive structure is arranged at the first surface of the substrate, wherein at least one power semiconductor device is arranged on the conductive structure and electrically connected thereto, wherein the one or more modules includes an inner volume for receiving the at least one power semiconductor device which volume is hermetically sealed from its surrounding by a module enclosure, wherein the module arrangement includes an arrangement enclosure at least partly defining a volume for receiving the one or more modules, and wherein the arrangement enclosure seals covers the volume.

An electronic device includes a vibration element having a detection signal electrode and a drive signal electrode, an IC disposed so as to be opposed to the vibration element, a first wiring pattern located between the IC and the vibration element, and electrically connected to the drive signal electrode, and a shield wiring pattern located on the vibration element side of the first wiring pattern, and electrically connected to a constant potential (ground).

Disclosed embodiments include external gettering provided by electronic packaging. An external gettering element for a semiconductor substrate, which may be incorporated as part of an electronic packaging for the structure, is disclosed. Semiconductor structures and stacked semiconductor structures including an external gettering element are also disclosed. An encapsulation mold compound providing external gettering is also disclosed. Methods of fabricating such devices are also disclosed.