Patent classifications
H01L23/20
Semiconductor devices and methods of manufacturing semiconductor devices
In one example, a semiconductor device comprises a cavity substrate comprising a base and a sidewall to define a cavity, an electronic component on a top side of the base in the cavity, a lid over the cavity and over the sidewall, and a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity. Other examples and related methods are also disclosed herein.
Semiconductor devices and methods of manufacturing semiconductor devices
In one example, a semiconductor device comprises a cavity substrate comprising a base and a sidewall to define a cavity, an electronic component on a top side of the base in the cavity, a lid over the cavity and over the sidewall, and a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity. Other examples and related methods are also disclosed herein.
Multi-chip package having stress relief structure
A method of manufacturing a semiconductor package includes: providing a substrate; providing a first die group comprising a first set of one or more dies, wherein the first die group is characterized by a first thickness; bonding a lower surface of the first die group to the substrate; providing a second die group comprising a second set of one or more dies, wherein the second die group is characterized by a second thickness larger than the first thickness; bonding the second die group to the substrate; providing a carrier substrate encapsulating at least one air gap, wherein the carrier substrate is characterized by a third thickness equal to or greater than a difference between the second thickness and the first thickness; and bonding a lower surface of the carrier substrate to an upper surface of the first die group.
Multi-chip package having stress relief structure
A method of manufacturing a semiconductor package includes: providing a substrate; providing a first die group comprising a first set of one or more dies, wherein the first die group is characterized by a first thickness; bonding a lower surface of the first die group to the substrate; providing a second die group comprising a second set of one or more dies, wherein the second die group is characterized by a second thickness larger than the first thickness; bonding the second die group to the substrate; providing a carrier substrate encapsulating at least one air gap, wherein the carrier substrate is characterized by a third thickness equal to or greater than a difference between the second thickness and the first thickness; and bonding a lower surface of the carrier substrate to an upper surface of the first die group.
ELECTRONIC COMPONENT
A device is provided that includes a substrate defined as a horizontal xy-plane and a vertical z-direction perpendicular to the horizontal xy-plane. The substrate includes a second and first side. The device may include a conductor region and a chip region in the horizontal xy-plane. The device may include one or more chips attached to the at least one chip region on the substrate. The device may include a packaging layer including a second side and a first side, wherein the second side of the packaging layer is attached to the first side of the substrate, wherein the packaging layer further includes one or more cavities in the at least one conductor region, and the one or more cavities extend from the first side of the packaging layer to the second side of the packaging layer, and wherein each of the one or more cavities contains a gas.
ELECTRONIC COMPONENT
A device is provided that includes a substrate defined as a horizontal xy-plane and a vertical z-direction perpendicular to the horizontal xy-plane. The substrate includes a second and first side. The device may include a conductor region and a chip region in the horizontal xy-plane. The device may include one or more chips attached to the at least one chip region on the substrate. The device may include a packaging layer including a second side and a first side, wherein the second side of the packaging layer is attached to the first side of the substrate, wherein the packaging layer further includes one or more cavities in the at least one conductor region, and the one or more cavities extend from the first side of the packaging layer to the second side of the packaging layer, and wherein each of the one or more cavities contains a gas.
Semiconductor device including a plurality of dielectric materials between semiconductor dies and methods of forming the same
A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.
Semiconductor device including a plurality of dielectric materials between semiconductor dies and methods of forming the same
A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.
Systems and methods for power module for inverter for electric vehicle
A power module includes: a first substrate having an outer surface and an inner surface, the first substrate extending from a first longitudinal end toward a second longitudinal end; a semiconductor die coupled to the inner surface of the first substrate; and a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate, the second substrate extending from a first longitudinal end toward a second longitudinal end, wherein the first longitudinal end of the first substrate is longitudinally offset from the first longitudinal end of the second substrate.
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
In one example, a semiconductor device comprises a cavity substrate comprising a base and a sidewall to define a cavity, an electronic component on a top side of the base in the cavity, a lid over the cavity and over the sidewall, and a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity. Other examples and related methods are also disclosed herein.