Patent classifications
H01L23/20
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
In one example, a semiconductor device comprises a cavity substrate comprising a base and a sidewall to define a cavity, an electronic component on a top side of the base in the cavity, a lid over the cavity and over the sidewall, and a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity. Other examples and related methods are also disclosed herein.
MULTI-CHIP PACKAGE HAVING STRESS RELIEF STRUCTURE
A semiconductor package is provided. The semiconductor package includes: a package substrate; a first die group having an upper surface and a lower surface opposite to each other and comprising a first plurality of dies, the lower surface of the first die group being directly bonded to the package substrate; a carrier substrate without any active electronic devices formed thereon and attached to the upper surface of the first die group and comprising a first air gap within the carrier substrate; a second die group comprising a second plurality of dies, the second die group being horizontally distal and distinct from the first die group and directly bonded to the package substrate; and a molding compound material disposed on the package substrate and encapsulating the first die group, the carrier substrate, and the second die group, wherein the molding compound material comprises a second air gap.
MULTI-CHIP PACKAGE HAVING STRESS RELIEF STRUCTURE
A semiconductor package is provided. The semiconductor package includes: a package substrate; a first die group having an upper surface and a lower surface opposite to each other and comprising a first plurality of dies, the lower surface of the first die group being directly bonded to the package substrate; a carrier substrate without any active electronic devices formed thereon and attached to the upper surface of the first die group and comprising a first air gap within the carrier substrate; a second die group comprising a second plurality of dies, the second die group being horizontally distal and distinct from the first die group and directly bonded to the package substrate; and a molding compound material disposed on the package substrate and encapsulating the first die group, the carrier substrate, and the second die group, wherein the molding compound material comprises a second air gap.
SEMICONDUCTOR DEVICE INCLUDING A PLURALITY OF DIELECTRIC MATERIALS BETWEEN SEMICONDUCTOR DIES AND METHODS OF FORMING THE SAME
A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.
SEMICONDUCTOR DEVICE INCLUDING A PLURALITY OF DIELECTRIC MATERIALS BETWEEN SEMICONDUCTOR DIES AND METHODS OF FORMING THE SAME
A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.