The present invention relates to a molded air-cavity package. In addition, the present invention is related to a device comprising the same. The present invention is particularly related to molded air-cavity packages for radio-frequency ‘RF’ applications including but not limited to RF power amplifiers.

Instead of using hard-stop features that are arranged around the entire perimeter of the package in a continuous manner, the present invention proposes to use spaced apart pillars formed by first and second cover supporting elements. By using only a limited amount of pillars, e.g. three or four, the position of the cover relative to the body can be defined in a more predictable manner. This particularly holds if the pillars are arranged in the outer corners of the package.

In one example, a semiconductor device comprises a cavity substrate comprising a base and a sidewall to define a cavity, an electronic component on a top side of the base in the cavity, a lid over the cavity and over the sidewall, and a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises a cavity substrate comprising a base and a sidewall to define a cavity, an electronic component on a top side of the base in the cavity, a lid over the cavity and over the sidewall, and a valve to provide access to the cavity, wherein the valve has a plug to provide a seal between a cavity environment and an exterior environment outside the cavity. Other examples and related methods are also disclosed herein.

A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

The present invention relates to a millimeter wave radar component package, comprising: a box cover, having a metal layer arranged on inner surface of the box cover, the metal layer facing a channel of a box body, wherein a cavity is formed between the box cover and the box body; and the box body, comprising: a first insulator, connected with the box cover, wherein in the first insulator a channel is opened, and one end of the channel corresponds with the position of antenna and the other end is connected with the cavity; one or more chips, arranged on a second insulator in a flip manner and covered by the first insulator; the second insulator, arranged between the first insulator and a third insulator; the third insulator; and the antenna and conductive lines, arranged in the third insulator and connected with pads of the one or more chips through the second insulator, wherein the conductive lines are exposed from the third insulator for electrical contact. The present invention further relates to a method for manufacturing the package.

The present invention relates to a millimeter wave radar component package, comprising: a box cover, having a metal layer arranged on inner surface of the box cover, the metal layer facing a channel of a box body, wherein a cavity is formed between the box cover and the box body; and the box body, comprising: a first insulator, connected with the box cover, wherein in the first insulator a channel is opened, and one end of the channel corresponds with the position of antenna and the other end is connected with the cavity; one or more chips, arranged on a second insulator in a flip manner and covered by the first insulator; the second insulator, arranged between the first insulator and a third insulator; the third insulator; and the antenna and conductive lines, arranged in the third insulator and connected with pads of the one or more chips through the second insulator, wherein the conductive lines are exposed from the third insulator for electrical contact. The present invention further relates to a method for manufacturing the package.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.

A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.