The present invention relates to a printed circuit board embedding a power die wherein interconnections between the power die and the printed circuit board are composed of micro/nano wires, the printed circuit board comprising a cavity wherein the power die is placed, and wherein the cavity is further filled with a dielectric fluid.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

An antenna device includes a package and at least one antenna. The package includes at least one radio frequency (RF) die and a molding compound in contact with at least one sidewall of the RF die. The antenna has at least one conductor at least partially in the molding compound and operatively connected to the RF die.

A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole, having an active surface having a connection pad disposed thereon and an inactive surface opposing the active surface, and having a protrusion bump disposed on the connection pad; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip. In the fan-out semiconductor package, step portions of the protrusion bumps may be removed.

The base of an integrated circuit package comprises a first side, and a second side opposing the first side. The base further comprises, a base mounting section, a die mounting section, and a recessed section. The recessed section comprises a recess between the die mounting section and the base mounting section. The base further comprises an opening extending through the base from the first side to the second side. At least a portion of the recess intersects with the opening.

Disclosed is a ceramic package for filling with a liquid-containing electrolyte, which includes: a package body defining a recessed cavity open at a front surface of the package body and including first and second ceramic layers stacked together; a plurality of electrode pads disposed on a bottom surface of the recessed cavity; and a plurality of outer connection terminals disposed on a back surface of the package body, wherein each of the electrode pads includes a pad body portion having a polygonal shape in plan view and an interlayer pad portion formed along an interlayer surface between the first and second ceramic layers, wherein the interlayer pad portion has a protruding part protruding outwardly from the pad body portion, and wherein via conductors are formed between the protruding parts of the electrode pads and the outer connection terminals through the first ceramic layer.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

A probe card includes a circuit board and a probe set. The probe set is electrically coupled to the circuit board. Also, the probe set includes a plurality of probes. Each of the plurality of probes includes a plurality of nanotwinned copper pillars that are arranged in a predetermined crystal orientation. In addition, each of the plurality of probes further includes a tip. The tip substantially and electrically contacts a chip. Such that the circuit board can test the chip via the tip.