Provided is a semiconductor device including: a circuit board; a wiring pattern; a first semiconductor chip and a second semiconductor chip; a first lead frame; and a second lead frame; wherein the first lead frame and the second lead frame each comprises: a chip joining portion provided above at least a part of the semiconductor chip; a wiring joining portion provided above at least a part of the wiring pattern; and a bridging portion for connecting the chip joining portion and the wiring joining portion; and in the first direction, a space between the bridging portion of the first lead frame and the bridging portion of the second lead frame is smaller than a space between the chip joining portion of the first lead frame and the chip joining portion of the second lead frame.

According to an aspect of the present disclosure, a semiconductor device includes a substrate, a resin case surrounding a region just above the substrate in a planar view, a semiconductor chip provided in the region and an electrode including a first portion pulled out from an upper surface of the resin case and a second portion provided below the upper surface of the resin case and to be inserted into the resin case, and being electrically connected to the semiconductor chip, wherein a first notch is formed over the first portion to the second portion in the electrode, and a first groove is formed to expose a portion, formed in the second portion, in the first notch on the upper surface of the resin case.

A method of manufacturing an electronic module includes supplying paste to an electronic component and/or a wiring board. The paste includes solder powder and first resin. The method includes supplying second resin to the electronic component and/or the wiring board. The method includes placing one of the electronic component and the wiring board on another. The method includes curing the second resin to form a second resin portion. The method includes heating the paste to a temperature equal to or higher than a solder melting point after the second resin portion is formed. The method includes solidifying molten solder at a temperature lower than the solder melting point to form a solder portion that bonds the electronic component and the wiring board. The method includes curing the first resin after the solder portion is formed, to form a first resin portion.

An electronic circuit having a first terminal and a second terminal. The electronic circuit includes a plurality of diodes connected in parallel, the plurality of diodes including a first diode and a second diode that respectively have applied thereto a first forward voltage and a second forward voltage, the second forward voltage being higher than the first forward voltage. A first path and a second path are formed from the first terminal, respectively via the first diode and the second diode, to the second terminal. An inductance of the first path is larger than an inductance of the second path.

A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.

An assembly for a power module includes an electrically isolating base body and first and second electrically conductive structures embedded in the base body. The first and electrically conductive structures are configured to carry different voltages during normal operation of the power module. The first and the second electrically conductive structure each comprise a first region that is not covered by the base body. The first region of the first conductive structure is arranged in a hole of the base body and is retracted with respect to an opening of the hole. The hole is filled with an electrically isolating material that covers the first region of the first conductive structure.

An assembly for a power module includes an electrically isolating base body and first and second electrically conductive structures embedded in the base body. The first and electrically conductive structures are configured to carry different voltages during normal operation of the power module. The first and the second electrically conductive structure each comprise a first region that is not covered by the base body. The first region of the first conductive structure is arranged in a hole of the base body and is retracted with respect to an opening of the hole. The hole is filled with an electrically isolating material that covers the first region of the first conductive structure.

A semiconductor module, including: plurality of output elements provided to constitute an upper arm and a lower arm; a resin case provided surrounding an accommodation space for accommodating the output elements; an arm-to-arm wiring line for connecting the upper arm with the lower arm; an output terminal, which is connected to the arm-to-arm wiring line and is for outputting output currents from the output elements to a load being external to the semiconductor module; a sense terminal, which is connected to the arm-to-arm wiring line and is for detecting currents that flow in the output elements; and an inductor provided between a connection point for connecting the arm-to-arm wiring line with the output terminal, and the output terminal is provided. An inductance of the inductor is 1 μH or more.

A semiconductor device includes a semiconductor unit including a semiconductor chip, a cooling plate having a cooling front surface on which the semiconductor unit is disposed, a case disposed along an outer edge of the cooling front surface at the outer edge via an adhesive so as to surround the semiconductor unit, and a sealing member sealing the semiconductor unit disposed on the cooling plate inside the case. The cooling plate has an interlocking portion, the interlocking portion including a recess in the cooling front surface, and an engagement surface disposed inside the recess and being inclined at an acute angle with respect to the cooling front surface.

A semiconductor device includes a semiconductor chip, an insulated circuit board on which the semiconductor chip is disposed, a cooling plate having a second front surface to which the insulated circuit board is disposed, a bonding member which bonding the insulated circuit board to the cooling plate, a case which surrounds the semiconductor chip and the insulated circuit board and is bonded to the second front surface of the cooling plate with an adhesive therebetween and a sealing member which seals the semiconductor chip and the insulated circuit board over the cooling plate in the case. The cooling plate has a coupling portion which is a projection or a recess at the second front surface of the cooling plate, and the coupling portion has an engaging surface that is inclined to form an acute angle with the second front surface of the cooling plate.