H01L23/24

Semiconductor device
11626333 · 2023-04-11 · ·

A semiconductor device includes: a semiconductor chip; a case having a frame portion that has an inner wall portion surrounding an housing area in which the semiconductor chip is disposed; a buffer member provided on at last part of the inner wall portion of the case on a side of the housing area; a low expansion member provided on said at least part of the inner wall portion with the buffer member interposed therebetween on the side of the housing area; and a sealing member that seals the housing area, wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.

SEMICONDUCTOR DEVICE
20230108221 · 2023-04-06 · ·

It is an object to provide a technique capable of performing appropriate fitting in a base plate and a case. A semiconductor device includes: a semiconductor element, an insulating substrate on which the semiconductor element is mounted; a base plate on which the insulating substrate is mounted; and a case mounted on the base plate to surround the semiconductor element and the insulating substrate. One or more convex portions each having a tapered shape are provided in one of a surface of the base plate and a surface of the case, and one or more concave portions each having a tapered shape to be fitted to the one or more convex portions are provided in the other one of the surface of the base plate and the surface of the case.

POWER MODULE
20220320049 · 2022-10-06 ·

A power module includes a mount layer, a control layer, and a drive layer that are formed on an electrically insulative substrate and multiple power semiconductor elements mounted on the mount layer in one direction and each including a first drive electrode connected to the mount layer, a second drive electrode connected to the drive layer, and a control electrode connected to the control layer. A control terminal is connected to the control layer and a detection terminal is connected to the drive layer. At least one of the control layer and the drive layer includes a detour portion that detours to reduce a difference between the power semiconductor elements in a sum of a length of a first conductive path between the control electrode and the control terminal and a length of a second conductive path between the second drive electrode and the detection terminal.

SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS

A semiconductor apparatus includes: a base plate; an insulating circuit board including a ceramic substrate, a circuit pattern formed on an upper surface of the ceramic substrate, a metal layer formed on a lower surface of the ceramic substrate and fixed on an upper surface of the base plate with a first joint material; a semiconductor device having a first surface fixed on the circuit pattern with a second joint material and a second surface which is an opposite surface of the first surface; a lead frame fixed on the second surface with a third joint material; and a case fixed to an outer edge portion of the base plate and enclosing the semiconductor device, wherein restoring force acts on the insulating circuit board in a direction of warpage that is convex upward, and restoring force acts on the base plate in a direction of warpage that is convex downward.

Power semiconductor device and method for fabricating a power semiconductor device

A power semiconductor device includes a die carrier, a power semiconductor chip coupled to the die carrier by a first solder joint, a sleeve for a pin, the sleeve being coupled to the die carrier by a second solder joint, and a sealing mechanically attaching the sleeve to the die carrier, the sealing being arranged at a lower end of the sleeve, wherein the lower end faces the die carrier, and wherein the sealing does not cover the power semiconductor chip.

SEMICONDUCTOR MODULE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

A semiconductor module includes an insulating sheet which has a first surface and extends in a first direction and a first terminal. The first terminal has a first region disposed on the first surface of the insulating sheet and having a first width in a second direction perpendicular to the first direction, a second region extending from the first region and having a second width in the second direction narrower than the first width, and a third region located away from the first surface and being electrically connected to both the first region and the second region.

Semiconductor device manufacturing method and semiconductor device
11640926 · 2023-05-02 · ·

A semiconductor device includes a semiconductor chip, a substrate having a main surface on which the semiconductor chip is arranged, a resin case which has a storage space therein and a side wall, the side wall having an injection path extending from the storage space to a device exterior, the resin case having a first opening at a bottom side thereof, connecting the storage space to the device exterior, the substrate being disposed on the resin case, at a main surface side of the substrate facing at the bottom side of the resin case, and a sealing material filling the storage space and the injection path.

Semiconductor device manufacturing method and semiconductor device
11640926 · 2023-05-02 · ·

A semiconductor device includes a semiconductor chip, a substrate having a main surface on which the semiconductor chip is arranged, a resin case which has a storage space therein and a side wall, the side wall having an injection path extending from the storage space to a device exterior, the resin case having a first opening at a bottom side thereof, connecting the storage space to the device exterior, the substrate being disposed on the resin case, at a main surface side of the substrate facing at the bottom side of the resin case, and a sealing material filling the storage space and the injection path.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
20230154882 · 2023-05-18 · ·

A semiconductor device includes: a semiconductor base body; a semiconductor chip; a sintering material layer bonded to a lower surface of the semiconductor chip and having a thickness decreasing toward an outer periphery of the semiconductor chip; and a conductive plate having a main surface facing the lower surface of the semiconductor chip and a recessed portion which the sintering material layer contacts in the main surface, the recessed portion having a depth decreasing toward the outer periphery of the semiconductor chip.

Multiple chip module trenched lid and low coefficient of thermal expansion stiffener ring

Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.