Provided are a semiconductor device and an inverter device with a decrease in yield being suppressed by preventing the adhesive from leaking into the inside of the semiconductor device. A heat sink, a wiring board provided on the heat sink, a semiconductor chip provided on the wiring board, a case housing provided on the heat sink so as to surround the wiring board and the semiconductor chip, an adhesive that adheres a lower surface joint portion of the case housing and an upper surface joint portion of the heat sink, a sealing material that fills the case housing and covers the wiring board and the semiconductor chip, and a convex portion provided on the lower surface joint portion of the case housing or the upper surface joint portion of the heat sink, that separates the adhesive from the sealing material are included.

An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

An integrated circuit (IC) assembly and a method for encapsulating of IC are presented. The IC assembly comprises an IC substrate having one or more micro-devices, at least one dielectric matrix element placed on said IC substrate over at least one of its one or more micro-devices; and an encapsulation element applied over said IC substrate and said at least one dielectric matrix element placed thereon to enclose and seal said IC substrate.

An integrated circuit (IC) assembly and a method for encapsulating of IC are presented. The IC assembly comprises an IC substrate having one or more micro-devices, at least one dielectric matrix element placed on said IC substrate over at least one of its one or more micro-devices; and an encapsulation element applied over said IC substrate and said at least one dielectric matrix element placed thereon to enclose and seal said IC substrate.

A power module (10) and a manufacturing method thereof are disclosed. The power module (10) includes a power assembly (11) and a drive board (12). The power assembly (11) includes a substrate (111), a power chip (112), and a package body (113). The power chip (112) is disposed on a mounting surface (1110) of the substrate (111). The package body (113) packages the power chip (112) on the substrate (111). The drive board (12) is disposed in the package body (113) and is located on a side, of the power chip (112), that backs the mounting surface (1110). The drive board (12) is electrically connected to the power chip (112). In the power module, a parasitic parameter between the drive board (12) and the power assembly (11) can be reduced, thereby improving electrical performance of the power module (10).

A semiconductor device includes: an insulating substrate; a semiconductor chip; a base plate; a first heat dissipating material; and a case. The semiconductor chip and a sealing material for sealing the semiconductor chip are housed in the case. The insulating substrate includes an insulating layer and a conductor pattern provided on an upper surface of the insulating layer. The semiconductor chip is joined onto the conductor pattern by a joining material. A lower surface of the insulating substrate and an upper surface of the base plate are in contact with each other with interposition of the first heat dissipating material. The insulating substrate and the base plate are not fixed to each other.

A processor substrate includes: an electrically insulating material having a first main side and a second main side opposite the first main side; a plurality of electrically conductive structures embedded in the electrically insulating material and configured to provide an electrical interface at the first main side of the electrically insulating material and to provide electrical connections from the electrical interface to the second main side of the electrically insulating material; and a power device module embedded in the electrically insulating material and configured to convert a voltage provided at the second main side of the electrically insulating material and which exceeds a voltage limit of the processor substrate to a voltage that is below the voltage limit of the processor substrate. An electronic system that includes the processor substrate is also described.

A semiconductor device includes: a case having an opening; a semiconductor element contained in the case; a control substrate which is disposed above the semiconductor element in the case and on which a control circuit to control the semiconductor element is disposed; a lid to cover the opening of the case; and a control terminal having one end portion connected to the control circuit disposed on the control substrate and the other end portion protruding out of the case. The control terminal has a bend in the case, and a side portion of the case or the lid is provided with a support capable of supporting the bend.

A semiconductor device includes a case enclosing a region filled with a sealing material. The case is made of resin. An electrode is fixed to the case. A section, which is a part of the electrode, is provided with a cutout that allows a part of the resin making the case to be exposed to the region.