A package structure that includes a pair of substrates arranged to oppose each other so as to form an internal space; a bonding portion sealing the pair of substrates; an element is sealed in the internal space and surrounded by the pair of substrates; an adsorption layer within the internal space and opposing at least one substrate of the pair of substrates, the adsorption layer constructed to adsorbs at least hydrogen; and a diffusion-inhibiting layer between the at least one substrate and the adsorption layer, and in which hydrogen is more difficult to diffuse compared with in the at least one substrate.

High-capacity dispensable moisture and hydrogen getter to be used as sealant and/or to control the level of these substances in electronic or optoelectronic sensitive devices, its use for the hermetic sealing or semi-hermetic sealing of such electronic or optoelectronic sensitive devices and a method to control the level of contaminants within them.

Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

Wafer level encapsulated packages includes a wafer, a glass substrate hermetically sealed to the wafer, and an electronic component. The glass substrate includes a glass cladding layer fused to a glass core layer and a cavity formed in the glass substrate. The electronic component is encapsulated within the cavity. In various embodiments, the floor of the cavity is planar and substantially parallel to a plane defined by a top surface of the glass cladding layer. The glass cladding layer has a higher etch rate in an etchant than the glass core layer. In various embodiments, the wafer level encapsulated package is substantially optically transparent. Methods for forming the wafer level encapsulated package and electronic devices formed from the wafer level encapsulated package are also described.

Wafer level encapsulated packages includes a wafer, a glass substrate hermetically sealed to the wafer, and an electronic component. The glass substrate includes a glass cladding layer fused to a glass core layer and a cavity formed in the glass substrate. The electronic component is encapsulated within the cavity. In various embodiments, the floor of the cavity is planar and substantially parallel to a plane defined by a top surface of the glass cladding layer. The glass cladding layer has a higher etch rate in an etchant than the glass core layer. In various embodiments, the wafer level encapsulated package is substantially optically transparent. Methods for forming the wafer level encapsulated package and electronic devices formed from the wafer level encapsulated package are also described.

An electroluminescent device, includes: a base substrate; a light emitting unit provided on the base substrate; a first accommodating structure surrounding the light emitting unit and provided on the base substrate; a first color rendering material filled in the first accommodating structure; a first inorganic thin film encapsulation layer covering the light emitting unit and the first color rendering material; a second accommodating structure provided on one side of the first inorganic thin film encapsulation layer distal to the first color rendering material; a second color rendering material filled in the second accommodating structure; and a second inorganic thin film encapsulation layer sealing the second color rendering material in the second accommodating structure; wherein the first color rendering material and the second color rendering material are capable of producing a color development reaction after mixture.

A packaging fill material for electrical packaging includes a base material, and a plurality of frangible capsules distributed in the base material. Each frangible capsule includes a liquid penetrant contrast agent therein having a different radiopacity than the base material. In response to a crack forming in the packaging fill material, at least one of the plurality of frangible capsules opens, releasing the liquid penetrant contrast agent into the crack. Cracks can be more readily identified in an IC package including the packaging fill material. The liquid penetrant contrast agent may have a radiopacity that is higher than the base material. Inspection can be carried out using electromagnetic analysis using visual inspection or digital analysis of the results to more easily identify cracks.

A packaging fill material for electrical packaging includes a base material, and a plurality of frangible capsules distributed in the base material. Each frangible capsule includes a liquid penetrant contrast agent therein having a different radiopacity than the base material. In response to a crack forming in the packaging fill material, at least one of the plurality of frangible capsules opens, releasing the liquid penetrant contrast agent into the crack. Cracks can be more readily identified in an IC package including the packaging fill material. The liquid penetrant contrast agent may have a radiopacity that is higher than the base material. Inspection can be carried out using electromagnetic analysis using visual inspection or digital analysis of the results to more easily identify cracks.

A semiconductor module includes a power electronics carrier including a metallization layer disposed on an electrically insulating substrate, a power semiconductor die mounted on the power electronics carrier, a housing that surrounds an interior volume over the power electronics carrier, a volume of electrically insulating encapsulant that fills the interior volume and encapsulates the power semiconductor die, and a pressure compensation element disposed on or within the electrically insulating encapsulant, wherein the electrically insulating encapsulant is a liquid, wherein the semiconductor module forms an impermeable seal that contains the volume of electrically insulating encapsulant, and wherein the pressure compensation element is configured to maintain the electrically insulating encapsulant at a substantially constant pressure during thermal expansion and thermal contraction of the electrically insulating encapsulant.