Methods and apparatus for gettering impurities in semiconductors are disclosed. A disclosed example multilayered die includes a substrate material, a component layer below the substrate material, and an impurity attractant region disposed in the substrate material.

A miniaturized microsystem device including at least one of electrical, optical and mechanical components in a hermetically or non-hermetically sealed housing with respect to air humidity or encapsulated, which contains a desiccant. The humidity-dependent lifetime of the arrangement is determined by measuring the absorptivity of the desiccant.

A miniaturized microsystem device including at least one of electrical, optical and mechanical components in a hermetically or non-hermetically sealed housing with respect to air humidity or encapsulated, which contains a desiccant. The humidity-dependent lifetime of the arrangement is determined by measuring the absorptivity of the desiccant.

Various semiconductor chips with gettering regions and methods of making the same are disclosed. In one aspect, an apparatus is provided that includes a semiconductor chip that has a first side and a second side opposite the first side. The first side has a plurality of laser ablation craters. Each of the ablation craters has a bottom. A gettering region is in the semiconductor chip beneath the laser ablation craters. The gettering region includes plural structural defects. At least some of the structural defects emanate from at least some of the bottoms of the laser ablation craters.

A semiconductor module includes: a mounting substrate including a mounting surface; a semiconductor element disposed on the mounting surface; a housing for the semiconductor element; a lid fixed to the housing and facing the mounting surface; an insulating sealing material disposed in a space inside the housing and sealing the semiconductor element; and a first adsorbent disposed between the lid and the insulating sealing material and is swollen by adsorption.

A semiconductor module includes: a mounting substrate including a mounting surface; a semiconductor element disposed on the mounting surface; a housing for the semiconductor element; a lid fixed to the housing and facing the mounting surface; an insulating sealing material disposed in a space inside the housing and sealing the semiconductor element; and a first adsorbent disposed between the lid and the insulating sealing material and is swollen by adsorption.

A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate. The semiconductor device structure includes a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate. The semiconductor device structure includes an upper conductive via between the conductive pillar and the interconnection structure. A center of the upper conductive via is laterally separated from a center of the protruding portion by a first distance. The semiconductor device structure includes a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. A center of the lower conductive via is laterally separated from the center of the protruding portion by a second distance that is shorter than the first distance.

A moisture and hydrogen adsorption getter is provided. The moisture and hydrogen adsorption getter includes a silicon substrate including a concave portion and a convex portion, a silicon oxide layer conformally provided along a surface of the concave portion and a surface of the convex portion and configured to adsorb moisture, and a hydrogen adsorption pattern disposed on the silicon oxide layer. A portion of the silicon oxide layer is exposed between portions of the hydrogen adsorption pattern.

A moisture and hydrogen adsorption getter is provided. The moisture and hydrogen adsorption getter includes a silicon substrate including a concave portion and a convex portion, a silicon oxide layer conformally provided along a surface of the concave portion and a surface of the convex portion and configured to adsorb moisture, and a hydrogen adsorption pattern disposed on the silicon oxide layer. A portion of the silicon oxide layer is exposed between portions of the hydrogen adsorption pattern.

A semiconductor device includes a first semiconductor component having a semiconductor substrate, and a barrier layer disposed at least on or at a portion of the first semiconductor component. The barrier layer includes a polymer material and an organic metal complexing agent covalently bound to the polymer material. In an embodiment, the organic metal complexing agent includes a crown ether and/or cryptand. In an embodiment, the polymer material includes a homopolymer or copolymer resulting from the polymerization of monomers selected from the group consisting of: imides, epoxies, silicones, monomers having functional side chains, methacrylates, and any combinations thereof.