H01L23/293

Methods of forming integrated circuit packages having adhesion layers over through vias

In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.

UNDERFILL FILM FOR SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE USING SAME
20230027838 · 2023-01-26 · ·

An underfill film for a semiconductor package and a method for manufacturing a semiconductor package using the underfill film are disclosed. The underfill film is suitable for a semiconductor package, which, by including an adhesive layer having low lowest melt viscosity, can improve the connection reliability of a package by minimizing the formation of voids during semiconductor packaging.

MANUFACTURING METHOD OF PACKAGE STRUCTURE OF ELECTRONIC DEVICE

A manufacturing method of a package structure of an electronic device is provided. The manufacturing method includes the following. First, a carrier plate is provided. The carrier plate includes a composite structure and has a first surface and a second surface opposite to each other. Next, an anti-warpage structure is formed on the first surface of the carrier plate. Then, a redistribution structure is formed on the second surface of the carrier plate. When the package structure manufactured with the manufacturing method of the package structure of the electronic device of the disclosure is applied to the electronic device, reliability and/or electrical properties of the electronic device are enhanced.

SEMICONDUCTOR MODULE AND POWER CONVERSION APPARATUS

A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.

WAFER AND METHOD OF MAKING, AND SEMICONDUCTOR DEVICE
20230230936 · 2023-07-20 ·

The present disclosure relates to a wafer, a manufacturing method thereof, and a semiconductor device. The wafer manufacturing method includes: providing a wafer having a scribe lane for die cutting. A plurality of scribe-lane through-silicon-vias is formed at the scribe lane, and the scribe-lane through-silicon-vias are filled with a protective material to form the scribe lane. Through the technique of forming through-silicon vias at the scribe lane and filling them with protective materials, performing cutting along the line of the scribe-lane through-silicon-vias during wafer scribing, the cutting stress is reduced so and damage to the die area is prevented. The scribe-lane through-silicon-vias can effectively reduce the scribe lane width, which is conducive to miniaturizing the scribe lane and improving the effective utilization of wafers.

MANUFACTURING OF ELECTRONIC COMPONENTS

The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.

Composition for curable resin, cured product of said composition, method of producing said composition and said cured product, and semiconductor device
11560465 · 2023-01-24 · ·

Provided is a curable resin composition for obtaining a cured product that can satisfy both high heat resistance and high adhesiveness to metal, a cured product thereof, and methods of producing the curable resin composition and the cured product, and a semiconductor device using the cured product as a sealant. A curable resin composition containing (A) a multifunctional benzoxazine compound having two or more benzoxazine rings, (B) a multifunctional epoxy compound having at least one norbornane structure and at least two epoxy groups, (C) a curing agent, (D) a triazole-based compound, and optionally (E) a curing accelerator and (F) an inorganic filler, a cured product thereof, and methods of producing the curable resin composition and the cured product. A semiconductor device in which a semiconductor element is disposed in a cured product obtained by curing a curable resin composition containing components (A) to (D), and optionally components (E) and (F).

Integrated circuit medical devices and method
11701059 · 2023-07-18 · ·

A universal implantable integrated circuit medical device platform having integral and monolithic circuit traces. The platform allows for implanting into a mammalian body single and multi-functional interface devices for sensing, monitoring stimulating and/or modulating physiological conditions within the body. Microelectronic circuitry may be integrated onto the platform or may be joined as modular components to the platform.

Semiconductor package
11705400 · 2023-07-18 · ·

A semiconductor package includes: a first substrate; a semiconductor chip mounted on the first substrate such that a circuit formation surface is oriented toward the first substrate; a second substrate arranged above the first substrate, the semiconductor chip being sandwiched between the first substrate and the second substrate; and a resin that seals the semiconductor chip and that is filled between the first substrate and the second substrate, wherein the second substrate includes a solder resist layer having a first surface facing a back surface that is an opposite surface of the circuit formation surface of the semiconductor chip, and wherein on an area of the first surface of the solder resist layer facing the back surface of the semiconductor chip, at least one protruding portion that protrudes towards the back surface of the semiconductor chip is provided.

SEMICONDUCTOR PRODUCTION DEVICE SEALING MATERIAL

A seal material for a semiconductor manufacturing device is made of a rubber composition containing fluororubber and phenol resin powder. The content of the phenol resin powder is 1 part by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the fluororubber. The average particle size of the phenol resin powder is 1 μm or more and 20 μm or less.