A substrate includes a metal component on a surface. A polymeric layer is deposited on the surface using molecular layer deposition. The polymeric layer includes a metalcone and has a thickness from 1 nm to 20 nm. The polymeric layer is stable at room temperature, but will undergo a structural change at high temperatures. The polymeric layer can be annealed to cause a structural change, which can occur during soldering.

A resin composition is provided, which includes a first polymer and a second polymer. The first polymer is formed by a reaction of an epoxy resin modified with a first elastic molecular segment and an epoxy resin curing agent. The second polymer is formed by a polymerization of an acrylate modified with a second elastic molecular segment.

The disclosure provides an electronic device including a substrate, a first semiconductor element, and a first protective structure. The first semiconductor element is disposed on the substrate and electrically connected to the substrate. The first semiconductor element has a first surface away from the substrate. The first protective structure covers at least a portion of the first surface.

A liquid molding compound for protecting five edges of a semiconductor chip and a preparation method thereof are disclosed. The liquid molding compound includes 15 to 40 parts by mass of an epoxy resin, 15 to 35 parts by mass of a curing agent, 0.1 to 3 parts by mass of a curing accelerator, 4 to 15 parts by mass of a toughening agent, 75 to 150 parts by mass of an inorganic filler, and 0.1 to 5 parts by mass of a coupling agent. The epoxy resin is one or more selected from the group consisting of a bisphenol A epoxy resin, a bisphenol F epoxy resin, and a biphenyl epoxy resin. The toughening agent is an adduct of an epoxy resin and a carboxyl-terminated liquid butyronitrile rubber, and the curing agent is a phenol-formaldehyde resin. The molding compound has a low coefficient of thermal expansion (CTE).

Hydrophobic, tough, photoimageable, functionalized polyimide formulations have been discovered that can be UV cured and developed in cyclopentanone. The present invention formulations can be used as passivation and redistribution layers with patterning provided by photolithograph, for the redistribution of I/O pads on fan-out RDL applications. The curable polyimide formulations reduce stress on thin wafers, when compared to conventional polyimide formulations, and provide low modulus, hydrophobic solder mask. These materials can serve as protective layers in any applications in which a thin, flexible, and hydrophobic polymer is required, that also has high tensile strength and high elongation at break.

A curable resin represented by General Formula (1). In General Formula (1), R.sub.1 each independently represent a monovalent substituent (an alkyl group, an alkoxy group, a fluorine atom, and the like), m is 0 to 4, n is 0 to 40, and R.sup.2's are each independently a monovalent group including a polymerizable functional group.

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A substrate treatment method for treating a substrate, includes: (a) applying a coating solution to a front surface of the substrate by a spin coating method to form a coating film; (b) supplying a solvent for the coating solution to a projection of the coating film formed at a front surface peripheral edge of the substrate at (a); and (c) rotating the substrate in a state where the supply of the solvent is stopped, to move a top of the projection to an outside in a radial direction of the substrate. (b) and (c) are repeatedly performed. The projection is a buildup of the coating solution protruding from the coating film.

Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

Methods for manufacturing semiconductor devices having a flexible reinforcement structure, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a semiconductor device includes electrically coupling at least one semiconductor die to a redistribution structure on a first carrier. The semiconductor die can include a first surface connected to the redistribution structure and a second surface spaced apart from the redistribution structure. The method also includes reducing a thickness of the semiconductor die to no more than 10 μm. The method further includes coupling a flexible reinforcement structure to the second surface of the at least one semiconductor die.

An electronic package includes a carrier, a protection layer and an electronic component. The carrier includes a dielectric layer and a pad in contact with the dielectric layer. The protection layer at least partially covers the pad. The electronic component is located over the protection layer and electrically connected to the pad. At least one portion of the protection layer under the electronic component is substantially conformal with a profile of the pad or with a profile of the dielectric layer.