A chip substrate includes a base substrate having a plurality of base circuit traces mounted thereon for supporting a chip assembly and an intermediate substrate mounted on the base substrate adjacent the plurality of base circuit traces. The intermediate substrate has a plurality of intermediate circuit traces mounted thereon. Each of the plurality of intermediate circuit traces are wirebonded to a respective one of the plurality of base circuit traces and the plurality of intermediate circuit traces are configured to be electrically coupled to an external device. For example, each of the plurality of intermediate circuit traces may be wirebonded to a respective one of a plurality of feedthrough circuit traces mounted on a feedthrough device.

Cryogenic integrated circuits are provided. A cryogenic integrated circuit includes a thermally conductive base, a data processor, a storage device, a buffer device, a thermally conductive shield and a cooling pipe. The data processor is located on the thermally conductive base. The storage device is located on the thermally conductive base and disposed aside and electrically connected to the data processor. The buffer device is disposed on the data processor. The thermally conductive shield covers the data processor, the storage device and the buffer device. The cooling pipe is located in physical contact with the thermally conductive base and disposed at least corresponding to the data processor.

One or more devices and/or methods provided herein relate to a method for fabricating a semiconductor device having a co-integrated RTD and HEMT. A semiconductor device can comprise an RTD and an HEMT that are co-integrated along a substrate. A fabrication method can comprise providing a heterostructure comprising a plurality of transistor layers of an HEMT, forming on the vertical stack a template structure comprising an opening, a cavity and a seed structure, the seed structure comprising a seed material and a seed surface, and growing a plurality of diode layers of an RTD within the cavity of the template structure from the seed surface, wherein the RTD and HEMT are co-integrated along a substrate.

Integrated circuit (IC) including domino logic circuit blocks with nFETs that are implemented in a first device layer and pFET keeper transistors that are implemented in a second device layer. The multiple device layers may be integrated within an IC die through layer transfer. Very low temperature operation (e.g., −25° C., or less) may greatly reduce electrical leakage current from dynamic nodes of the domino logic circuit blocks so that output capacitance of the keeper transistors is sufficient to maintain dynamic node charge levels for good noise margin.

The present description concerns a support (108) for an electronic die (110), comprising: a first printed circuit board (300); a first conductive region (310), intended to receive the die, located on a first surface (108i) of the first board; and a second conductive region (320), intended to receive a thermal connector (200), located on a second surface (108s) of the first board, opposite to the first surface, the first region being connected to the second region by at least one through conductive via (330), located vertically in line with the first region.

A superconducting flexible interconnecting cable connector for supercomputing systems is provided. The cable connector includes a base with a recessed area defined therein to receive superconducting flexible interconnecting cables and superconducting connecting chips to electrically connect the superconducting flexible interconnecting cables to each other. A cover is provided to cover the superconducting flexible interconnecting cables and the superconducting connecting chips when the cover is in a closed position. A compression device compresses the superconducting connecting chips together to secure the superconducting flexible interconnecting cables and the superconducting connecting chips inside the recessed area of the base when the cover is in the closed position.

A functional chip includes a substrate including a first face and a second face, the second face of the substrate forming the front face of the functional chip; a first oxide layer on the first face of the substrate; a second oxide layer on the first oxide layer; a first routing level formed on the surface of the second oxide layer in contact with the first oxide layer; a third oxide layer on the second oxide layer wherein a semiconductor component is inserted; a rear face formed by the surface of the third oxide layer opposite the second oxide layer, the rear face including superconductor routing tracks surrounded at least partially by one or more conductor routing tracks, the semiconductor component being connected to the superconductor routing tracks via superconductor vias and the conductor routing tracks of the rear face being connected to the routing level via conductor vias.

Cryogenic integrated circuits are provided. A cryogenic integrated circuit includes a thermally conductive base, a data processer, a storage device, a buffer device, a thermally conductive shield and a cooling pipe. The data processer is located on the thermally conductive base. The storage device is located on the thermally conductive base and disposed aside and electrically connected to the data processer. The buffer device is disposed on the data processer. The thermally conductive shield covers the data processer, the storage device and the buffer device. The cooling pipe is located in physical contact with the thermally conductive base and disposed at least corresponding to the data processer.

A sample cell is provided for holding a sample to be placed in a cryogenically cooled environment. The sample cell comprises an airtight, openable and closable enclosure. Within said enclosure is a sample base for receiving the sample. A refrigerator attachment is provided for attaching the sample cell to a refrigerated body of a cryogenically cooled environment. The sample cell comprises a thermal connection between the sample base and the refrigerator attachment. One or more airtight connectors are provided for establishing electric connections between inside and outside of said enclosure.

A sealed container having gloves attached thereto is provided as part of a physical properties measuring system (PPMS). The PPMS includes a sealed pressurized portion that is pressurized with a gas to purge out air from inside the sealed pressurized portion to reduce water vapor inside the sealed pressurized portion below a water vapor threshold. The system further includes a cryogenic tank having a cryostat disposed therein. The cryogenic tank contains a cryogenic liquid cooled to a cryogenic temperature. Test samples are placed inside the sealed pressurized portion in preparation of measuring physical properties of the test samples. One of the test samples is immersed in the cryogenic liquid to measure the physical properties. The test sample is removed from the cryogenic liquid and is exchanged for another test sample inside the sealed pressurized portion to prevent ice formation inside the cryostat.