A semiconductor structure with an air gap includes a dielectric stack having a first dielectric layer on a substrate, a second dielectric layer on the first dielectric layer, and a third dielectric layer on the second dielectric layer. A first conductive layer and a second conductive layer are disposed in the dielectric stack. The first conductive layer and the second conductive layer are coplanar. A cross-like-shaped air gap is disposed in the dielectric stack between the first and second conductive layers. An oxide layer is disposed on a sidewall of the second dielectric layer within the cross-like-shaped air gap.

A method for forming a semiconductor structure includes: providing a substrate; forming a stacked structure on the substrate; forming a barrier layer on a sidewall of the stacked structure; forming a first dielectric layer covering the barrier layer and the stacked structure; removing a portion of the first dielectric layer to expose an upper portion of the stacked structure; forming a metal layer covering the stacked structure and the first dielectric layer; performing an annealing process to react the metal layer with the stacked structure to form a metal silicide layer at the upper portion of the stacked structure; removing an unreacted portion of the metal layer; removing a portion of the barrier layer to form a recess above the barrier layer; and forming a second dielectric layer covering the metal silicide layer and the first dielectric layer to form air gaps on both sides of the stacked structure.

A method for forming a semiconductor structure includes: providing a substrate; forming a stacked structure on the substrate; forming a barrier layer on a sidewall of the stacked structure; forming a first dielectric layer covering the barrier layer and the stacked structure; removing a portion of the first dielectric layer to expose an upper portion of the stacked structure; forming a metal layer covering the stacked structure and the first dielectric layer; performing an annealing process to react the metal layer with the stacked structure to form a metal silicide layer at the upper portion of the stacked structure; removing an unreacted portion of the metal layer; removing a portion of the barrier layer to form a recess above the barrier layer; and forming a second dielectric layer covering the metal silicide layer and the first dielectric layer to form air gaps on both sides of the stacked structure.

Embodiments disclosed herein include multi-die packages with open cavity bridges. In an example, an electronic apparatus includes a package substrate having alternating metallization layers and dielectric layers. The package substrate includes a first plurality of substrate pads and a second plurality of substrate pads, and an open cavity. A bridge die is in the open cavity, the bridge die including a first plurality of bridge pads, a second plurality of bridge pads, a power delivery bridge pad between the first plurality of bridge pads and the second plurality of bridge pads, and conductive traces. A first die is coupled to the first plurality of substrate pads and the first plurality of bridge pads. A second die is coupled to the second plurality of substrate pads and the second plurality of bridge pads. A power delivery conductive line is coupled to the power delivery bridge pad.

Embodiments disclosed herein include multi-die packages with open cavity bridges. In an example, an electronic apparatus includes a package substrate having alternating metallization layers and dielectric layers. The package substrate includes a first plurality of substrate pads and a second plurality of substrate pads. The package substrate also includes an open cavity between the first plurality of substrate pads and the second plurality of substrate pads, the open cavity having a bottom and sides. The electronic apparatus also includes a bridge die in the open cavity, the bridge die including a first plurality of bridge pads, a second plurality of bridge pads, and conductive traces. An adhesive layer couples the bridge die to the bottom of the open cavity. A gap is laterally between the bridge die and the sides of the open cavity, the gap surrounding the bridge die.

A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.

An airbridge implements connections on a superconducting chip. It comprises a strip of superconductive material between a first superconductive area and a second superconductive area. A first end of said strip comprises a first planar end portion attached to and parallel with said first superconductive area, and a second end of said strip comprises a respective second planar end portion. A middle portion is located between said first and second planar end portions, forming a bend away from a plane defined by the surfaces of the first and second superconductive areas. First and second separation lines separate the end portions from the middle portion. At least one of said first and second separation lines is directed otherwise than transversally across said strip.

Gate fingers extending symmetrically from both sides of gate connecting portions, drain electrodes adjacent to both the gate fingers extending from both the sides of the gate connecting portions, and source electrodes respectively adjacent to the gate fingers extending from both the sides of the gate connecting portions are included. Gate air bridges connect the gate connecting portions and a gate routing line while straddling the source electrodes.

A method for manufacturing a patterned polyimide aerogel film on a substrate includes: dispensing a polyimide prepolymer sol onto a first portion of a surface of a substrate, a second portion of the surface of the substrate being substantially free of the polyimide prepolymer sol; forming a patterned film of a polyimide prepolymer gel on the substrate from the polyimide prepolymer sol; drying the polyimide prepolymer gel to form a patterned film of a polyimide prepolymer aerogel on the substrate; and curing the polyimide prepolymer aerogel on the substrate to form the patterned polyimide aerogel film on the first portion of the surface of the substrate, the second portion of the surface of the substrate being substantially free of the patterned polyimide aerogel film.

A semiconductor device including a decoupling capacitor disposed between adjacent device source-drain regions, the decoupling capacitor comprising an outer metal liner, a dielectric disposed adjacent to the outer metal liner, and an inner metal liner disposed adjacent to the dielectric, a single diffusion break isolation region disposed between the adjacent device source-drain regions. The outer metal liner is disposed in electrical contact with the adjacent device source-drain regions.