A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

Embodiments of the present disclosure provide a stacking edge interconnect chiplet. In one embodiment, a semiconductor device is provided. The semiconductor device includes a first integrated circuit die comprising a first device layer having a first side and a second side opposite the first side, a first interconnect structure disposed on the first side of the first device layer, and a second interconnect structure disposed on the second side of the first device layer. The semiconductor device also includes a power line extending through the first device layer and in contact with the first interconnect structure and the second interconnect structure, and a second integrated circuit die disposed over the first integrated circuit die, the second integrated circuit die comprising a third interconnect structure in contact with the second interconnect structure of the first integrated circuit die.

A release layer is formed on a surface of an integrated circuit wafer. The surface is passivated and includes metal contact materials. A stress-engineered film having an intrinsic stress profile is deposited over the release layer. The stress-engineered film is patterned and the release layer is undercut etched so that a released portion of the patterned stress-engineered film is released from the surface while leaving an anchor portion fixed to the surface. The intrinsic stress profile in the stress-engineered film biases the released portion away from the surface. The released portion is placed entirely within an area defined by the metal contact material.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

A release layer is formed on a surface of an integrated circuit wafer. The surface is passivated and includes metal contact materials. A stress-engineered film having an intrinsic stress profile is deposited over the release layer. The stress-engineered film is patterned and the release layer is undercut etched so that a released portion of the patterned stress-engineered film is released from the surface while leaving an anchor portion fixed to the surface. The intrinsic stress profile in the stress-engineered film biases the released portion away from the surface. The released portion is placed entirely within an area defined by the metal contact material.

A package structure includes a first encapsulation member, a second encapsulation member, at least one semiconductor chip, a plurality of metal pins and a second insulation layer. The first encapsulation member includes a first metal layer, a first insulation layer and a second metal layer. The at least one semiconductor chip is disposed between the first encapsulation member and the second encapsulation member. The at least one semiconductor chip comprises a plurality of conductive terminals connected with the first metal layer or a third metal layer. The plurality of metal pins are disposed between and extended outward from the first encapsulation member and the second encapsulation member. The second insulation layer is disposed between the first encapsulation member and the second encapsulation layer for securing the first encapsulation member, the second encapsulation member, the at least one semiconductor chip, and the plurality of metal pins.

A method for forming a through-substrate via structure includes providing a substrate and providing a conductive via structure adjacent to a first surface of the substrate. The method includes providing a recessed region on an opposite surface of the substrate towards the conductive via structure. The method includes providing an insulator in the recessed region and providing a conductive region extending along a first sidewall surface of the recessed region in the cross-sectional view. In some examples, the first conductive region is provided to be coupled to the conductive via structure and to be further along at least a portion of the opposite surface of the substrate outside of the recessed region. The method includes providing a protective structure within the recessed region over a first portion of the first conductive region but not over a second portion of the first conductive region that is outside of the recessed region. The method includes attaching a conductive bump to the second portion of the first conductive region.

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

A through-substrate vias structure includes a substrate having opposing first and second major surfaces. One or more conductive via structures are disposed extending from the first major surface to a first vertical distance within the substrate. A recessed region extends from the second major surface to a second vertical distance within the substrate and adjoining a lower surface of the conductive via. In one embodiment, the second vertical distance is greater than the first vertical distance. A conductive region is disposed within the recessed region and is configured to be in electrical and/or thermal communication with the conductive via.