A semiconductor device has a first semiconductor wafer. The first semiconductor wafer is singulated to provide a first wafer section including at least one first semiconductor die or a plurality of first semiconductor die. The first wafer section is a fractional portion of the first semiconductor wafer. An edge support structure is formed around the first wafer section. A second wafer section includes at least one second semiconductor die. The second wafer section can be an entire second semiconductor wafer. The first semiconductor die is a first type of semiconductor device and the second semiconductor die is a second type of semiconductor device. An alignment opening is formed through the first wafer section and second wafer section with a light source projected through the opening. The first wafer section is bonded to the second wafer section with the first semiconductor die aligned with the second semiconductor die.

A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

A semiconductor device includes a singulated region of semiconductor material having a first major surface and a second major surface opposite to the first major surface. In one embodiment, the second major surface includes a recessed surface portion bounded by opposing sidewall portions extending outward from the region of semiconductor material in cross-sectional view. The sidewall portions have outer surfaces defining peripheral edge segments of the singulated region of semiconductor material. An active device region is disposed adjacent to the first major surface and a first conductive layer is disposed adjoining the recessed surface portion. The recessed surface portion provides a semiconductor device having improved electrical characteristics, and the sidewall portions provide a semiconductor device that is less susceptible to warpage, breakage, and other reliability issues.

Embodiments of the present disclosure provide a method for forming a semiconductor package. In one embodiment, the method includes providing a first integrated circuit die having a first circuit design on a substrate, providing a second integrated circuit die having a second circuit design on the substrate, wherein the first and second integrated circuit dies are separated from each other by a scribe line. The method also includes forming a first interconnect structure on a first surface of the first integrated circuit die, forming a second interconnect structure on a first surface of the second integrated circuit die, extending a power rail from a second surface of the first integrated circuit die to a first side of a source/drain (S/D) feature, forming one or more power lines through an entire thickness of the first and second integrated circuit dies, respectively, forming a third interconnect structure on the second surface of the first integrated circuit die, and forming a fourth interconnect structure on the second surface of the second integrated circuit die.

A semiconductor device has a first semiconductor wafer. The first semiconductor wafer is singulated to provide a first wafer section including at least one first semiconductor die or a plurality of first semiconductor die. The first wafer section is a fractional portion of the first semiconductor wafer. An edge support structure is formed around the first wafer section. A second wafer section includes at least one second semiconductor die. The second wafer section can be an entire second semiconductor wafer. The first semiconductor die is a first type of semiconductor device and the second semiconductor die is a second type of semiconductor device. An alignment opening is formed through the first wafer section and second wafer section with a light source projected through the opening. The first wafer section is bonded to the second wafer section with the first semiconductor die aligned with the second semiconductor die.

A stacked semiconductor device structure includes a first semiconductor device having a first major surface and a second major surface opposite to the first major surface. The second major surface includes a recessed region bounded by sidewall portions, and the sidewall portions have outer surfaces defining peripheral edge segments of the first semiconductor device. A first conductive layer is disposed adjoining at least portions of the recessed region. A second semiconductor device having a third major surface and a fourth major surface opposite to the third major surface includes a first portion that is electrically connected to the first conductive layer within the recessed region, and at least a portion of the second semiconductor device is disposed within the recessed region.

A stacked semiconductor device structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a recessed surface portion bounded by opposing sidewall portions extending outward to define a recessed region. A conductive layer is disposed along at least the recessed surface portion. The second semiconductor device is disposed within the recessed region and is electrically connected to the conductive layer. In one embodiment, the stacked semiconductor device is connected to a conductive lead frame and is at least partially encapsulated by a package body.

A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

An integrated circuit (IC) device includes an IC and encapsulating material surrounding the IC. Leads are coupled to the IC and extend outwardly from sides of the encapsulating material, with each lead having three contiguous exposed segments with upper and lower bends defining a Z-shape. In another example, the leads include an upper horizontal segment, lower horizontal segment, and intermediate curved segment extending upwardly from the upper horizontal segment and downwardly to the lower horizontal segment.

A photovoltaic junction box is disclosed. The photovoltaic junction box has a housing, a plurality of contacts disposed in the housing, and a diode mounted on two adjacent contacts. Each diode has a pair of first pins separated from each other. Each first pin has a soldering end portion soldered on a first contact of the two adjacent contacts. A connection piece connects the soldering end portions of the pair of first pins and is soldered on the first contact.