A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer. An electrically-conducting connection is formed in a trench. The handle wafer is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.

Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Various protocols can be employed during processing to avoid cross-contamination between copper-plated and non-copper-plated wafers. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

An electronic assembly, comprising a carrier wafer having a top wafer surface and a bottom wafer surface; an electronic integrated circuit being formed in the carrier wafer and comprising a wafer contact pad on the top wafer surface; said carrier wafer comprising a through-wafer cavity joining the top and bottom wafer surfaces; a component chip having a component chip top surface, a component chip bottom surface and component chip side surfaces, the component chip being held in said through-wafer cavity by an attachment material attaching at least one wall of the through-wafer cavity to at least one of the component chip bottom surface and a component chip side surface; said component chip comprising at least one component contact pad on said component chip top substrate; a first conductor connecting said wafer contact pad and said component contact pad.

A semiconductor device includes a substrate; a first insulating layer provided on the substrate; a first metal layer provided on the first insulating layer; a second metal layer provided on the first metal layer; and a second insulating layer covering the first metal layer and the second metal layer. An upper surface of the first metal layer has a first region that is in contact with the second metal layer, and a second region that is separated from the second metal layer. The second insulating layer is in direct contact with a side surface and the second region of the first metal layer and an upper surface and a side surface of the second metal layer. A width of the first metal layer is greater than or equal to a width of the second metal layer in a direction parallel to the substrate.

A semiconductor package includes: an electrically insulating core and an electrically conductive first via extending through a periphery region of the core, the core having glass fibres interwoven with epoxy material and one or more regions where the glass fibres are exposed from the epoxy material; a power semiconductor die embedded in an opening in the core and having a first load terminal bond pad which faces a same direction as a first side of the core, a second load terminal bond pad which faces a same direction as a second side of the core, and a control terminal bond pad; a resin that encases the power semiconductor die; a first contact pad plated on the first via at the second side of the core; and a second contact pad plated on the first load terminal bond pad of the power semiconductor die at the first side of the core.

Implementations of a semiconductor device may include: a silicon substrate including a first side and a second side. The second side of the substrate may include an active area. The device may include a metal stack including: a back metallization on the first side of the substrate, an electroplated metal layer on the back metallization; and an evaporated gold metal layer on the electroplated metal layer.

In one implementation, a method for forming ultra-thin semiconductor components includes fabricating multiple devices including a first device and a second device in a semiconductor wafer, and forming a street trench within the semiconductor wafer and between the first and second devices. The method continues with forming a dielectric skeleton structure over the semiconductor wafer, the dielectric skeleton structure laterally extending to at least partially cover the first and second devices, while also substantially filling the street trench. The method continues with thinning the semiconductor wafer from a backside to expose the dielectric skeleton structure in the street trench to form a first ultra-thin semiconductor component having the first device, and a second ultra-thin semiconductor component having the second device. The method can conclude with cutting through the dielectric skeleton structure to singulate the first and second ultra-thin semiconductor components.

A method for packaging a circuit component, comprising: forming a first protruding pad on a first copper substrate and a through-hole in the first protruding pad; forming a second protruding pad on a second copper substrate and placing a circuit dice of the circuit component on the second protruding pad having a conductive paste coated thereon wherein a first electrode of the dice facing the second protruding pad; stacking the first copper substrate onto the second copper substrate with the first protruding pad having a conductive paste coated thereon aligned and pressing onto the circuit dice placed on the second protruding pad wherein a second electrode of the dice facing the first protruding pad; inserting a copper rod tightly into the through-hole until contacting with a conductive paste coated on the second substrate; heat-treating the stacked structure for the circuit dice and the copper rod to form secured electrical connection with the first and second copper substrates respectively and further forming a hermetic seal in the space between the first and second copper substrates; and using the hermetic seal as a rigid processing structure, etching the exposed surface of the first and second copper substrates to remove the entire thickness of copper other than in the area of the first and second protruding pads and in the area other than where the copper rod connects to the second copper substrate, thereby forming the device terminals of the circuit component package.

A method for manufacturing a semiconductor component including: providing a flat carrier with an upper side and a lower side, the carrier including a continuous opening that runs between the upper side and the lower side; providing a semiconductor arrangement that includes a semiconductor chip that includes electrically and/or optically active regions on a lower side; arranging the semiconductor arrangement in the opening such that a lower side of the semiconductor arrangement and the lower side of the carrier run in a common plane; casting the semiconductor arrangement with a potting compound, such that the semiconductor arrangement is materially connected to the carrier; and thinning out the semiconductor system by way of grinding from above, such that an upper side of the carrier and an upper side of the semiconductor arrangement run in a common plane.

According to one embodiment, a semiconductor device includes first to sixth semiconductor regions, a first electrode, and a first insulating film. The first semiconductor region includes first and second partial regions. The second semiconductor region is separated from the first partial region in a second direction crossing a first direction. The third semiconductor region is provided between the first partial region and the second semiconductor region. The fourth semiconductor region is provided between the first partial region and the third semiconductor region. The first electrode is separated from the second partial region, the second and third semiconductor regions, and a portion of the fourth semiconductor region. The first insulating film contacts the third semiconductor region. The fifth semiconductor region is provided between the first insulating film and the second partial region. The sixth semiconductor region is provided between the first insulating film and the fifth semiconductor region.