A semiconductor device comprises a semiconductor substrate, a plurality of metal layers, an adhesive layer, a compound layer, and a plurality of contact pads. A thickness of the semiconductor substrate is in a range from 15 m to 35 m. A thickness of the compound layer is larger than the thickness of the semiconductor substrate. A coefficient of thermal expansion of the compound layer is less than or equal to 9 ppm/ C. A glass transition temperature of the compound layer is larger than 150 C. The plurality of metal layers comprises a first titanium layer, a first nickel layer, a silver layer, a second nickel layer, and a metallic layer. In a first example, the metallic layer is a second titanium layer. In a second example, the metallic layer is a Titanium Nitride (TiN) layer.

In one implementation, a method for forming ultra-thin semiconductor components includes fabricating multiple devices including a first device and a second device in a semiconductor wafer, and forming a street trench within the semiconductor wafer and between the first and second devices. The method continues with forming a dielectric skeleton structure over the semiconductor wafer, the dielectric skeleton structure laterally extending to at least partially cover the first and second devices, while also substantially filling the street trench. The method continues with thinning the semiconductor wafer from a backside to expose the dielectric skeleton structure in the street trench to form a first ultra-thin semiconductor component having the first device, and a second ultra-thin semiconductor component having the second device. The method can conclude with cutting through the dielectric skeleton structure to singulate the first and second ultra-thin semiconductor components.

A method of manufacturing a semiconductor device that includes: preparing a pair of substrates that respectively include a device structure on one primary surface or another primary surface thereof; stacking the substrates so that said one primary surfaces face each other, exposing said another surfaces to the outside, and fixing entire peripheral outer edges of the substrates that have been stacked to each other; and thereafter, plating said exposed another primary surfaces of the stacked and fixed substrates.

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a thermally conductive flow layer underlying the sintered metallic layer, and a thermally conductive substrate underlying the thermally conductive flow layer.

A semiconductor package includes a power semiconductor chip comprising SiC, and a leadframe part including Cu. The power semiconductor chip is arranged on the leadframe part. A solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe part includes at least one intermetallic phase.

An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate. The method also includes forming a first array of contact pads disposed in the contact region. The method also includes forming electrical connections between the first array of process control monitoring structures and the first array of contact pads, wherein all external electrical connections to the first array of process control monitoring structures are made through the first array of contact pads.

A dual damascene structure with an embedded liner and methods of manufacture are disclosed. The method includes forming a dual damascene structure in a substrate. The method further includes reflowing a seed layer such that material of the seed layer flows into a via of the dual damascene structure. The method further includes forming a liner material on the material over or within the via of the dual damascene structure. The method further includes filling any remaining portions of the via and a trench of the dual damascene structure with additional material.

An electric device with a multi-layer contact is disclosed. In an embodiment, the electronic device includes a carrier, a semiconductor substrate attached to the carrier, and a layer system disposed between the semiconductor substrate and the carrier. The layer system includes an electrical contact layer disposed on the semiconductor substrate. A functional layer is disposed on the electrical contact layer. An adhesion layer is disposed on the functional layer. A solder layer is disposed between the adhesion layer and the carrier.

The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part; and a surface metal layer outwardly formed on a side of the Ni-barrier metal layer opposite to the side toward the semiconductor-element constituting part, to be connected to the metal nanoparticles sintered layer; wherein the Ni-barrier metal layer contains a metal for suppressing diffusion of nickel toward the surface metal layer.