Various multi-die arrangements and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing a semiconductor chip device is provided. A redistribution layer (RDL) structure is fabricated with a first side and second side opposite to the first side. An interconnect chip is mounted on the first side of the RDL structure. A first semiconductor chip and a second semiconductor chip are mounted on the second side of the RDL structure after mounting the interconnect chip. The RDL structure and the interconnect chip electrically connect the first semiconductor chip to the second semiconductor chip.

Semiconductor packages with programmable routing pathways are disclosed. The semiconductor package may have a source trace that may be electrically coupled to two or more different electrical pathways, where any of the electrical pathways may be activated to provide an electrical connection between the source trace and one or more destination nodes. Each of the electrical pathways may have a corresponding metal well with a correspond airgap overlying the metal well, as well as corresponding heating elements. If a particular heating element is energized, the heating element may melt metal in a corresponding metal well and the molten metal may migrate by capillary action into the overlying airgap to complete an electrical connection between the source trace and a destination node.

A silicon interposer that includes an array, or pattern, of conductive paths positioned within a silicon substrate with a plurality of pins on the exterior of the substrate. Each of the pins is connected to a portion of the array of conductive paths. The array of conductive paths is configurable to provide a first electrical flow path through the substrate via a portion of the array of conductive paths or a second electrical flow path through the substrate. The electrical flow path through the substrate may be customizable for testing various die or chip layout designs. The electrical flow path through the substrate may be customizable by laser ablation of portions of the conductive paths, breaking of fuses along the conductive paths, and/or the actuation of logic gates connected to the conductive paths.

A power module includes a number of sub-modules connected via removable jumpers. The removable jumpers allow the connections between one or more power semiconductor die in the sub-modules to be reconfigured, such that when the removable jumpers are provided, the power module has a first function, and when the removable jumpers are removed, the power module has a second function. The removable jumpers may also allow for independent testing of the sub-modules. The power module may also include a multi-layer printed circuit board (PCB), which is used to connect one or more contacts of the power semiconductor die. The multi-layer PCB reduces stray inductance between the contacts and therefore improves the performance of the power module.

A multi-chip packaged device may include a first integrated circuit die with a first integrated circuit, such that the first integrated circuit may include a first plurality of ports disposed on a first side and a second plurality of ports disposed on a second side of the first integrated circuit die. The multi-chip packaged device may also include a second integrated circuit die, such that the second integrated circuit may include a third plurality of ports disposed on a third side of the second integrated circuit die. The first integrated circuit may communicate with the first side of the second integrated circuit when placed adjacent to the first side and communicate with the second side of the first integrated circuit die when placed adjacent to the second side.

A semiconductor package includes multiple dies that share the same package pin. An output enable register provided on each die is used to select the die that drives an output to the shared pin. A hardware arbitration circuit ensures that two or more dies do not drive an output to the shared pin at the same time.

A power semiconductor module (34), comprising a substrate (12) which carries a plurality of power semiconductor devices (10), wherein the plurality of power semiconductor devices (10) comprises a first group of power semiconductor devices (10) and a second group of at least one power semiconductor device (10). The first group of power semiconductor devices (10) consists of at least two non-damaged power semiconductor devices (10b, 10c), and the second group of power semiconductor devices (10) consists of at least one damaged power semiconductor device (10a). The at least two non-damaged power semiconductor devices (10b, 10c) are electrically interconnected in a parallel configuration, and the second group of at least one power semiconductor device (10) is electrically separated from the members of the first group of power semiconductor devices (10).

The disclosure further relates to an electrical converter and a method for manufacturing a power semiconductor module (34).

A semiconductor device assembly comprises a package substrate including (i) an upper surface having a plurality of internal contacts, (ii) a lower surface having a plurality of external contacts coupled to the plurality of internal contacts, and (iii) a cavity extending into the package substrate. The assembly further comprises a stack of first semiconductor devices disposed in the cavity, an uppermost first semiconductor device of the stack having a plurality of stack contacts, and an interposer including (i) a bottom surface having a first plurality of lower contacts coupled to the plurality of stack contacts and a second plurality of lower contacts coupled to the plurality of internal contacts, and (ii) a top surface having a plurality of upper contacts coupled to the first and second pluralities of lower contacts. The assembly further comprises a second semiconductor device including a plurality of die contacts coupled to the plurality of upper contacts.

Embodiments herein describe a 3D stack of dies (e.g., an active-on-active (AoA) stack) with a connectivity die that enables the decoupling of processing regions in coupled dies from each other and from the physical location of I/O blocks on an I/O die. For example, the first die may have a plurality of hardware processing blocks that are arranged in a regular manner (e.g., an array with rows and columns). The connectivity die can include interconnects that couple these hardware processing blocks to I/O blocks in a second die. These I/O blocks may be arranged in an irregular manner. The interconnects in the connectivity die can provide fair access so that processing blocks on a first side of the first die can access an I/O block on the opposite side of the second die without using resources for neighboring processing blocks.

Systems and methods to translate or convert a desired circuit into a database that instructs a place and route or wire bonding machine where on a substrate to place components and also where to place bond wires on the pads of a connection matrix on a substrate. During the assembly process, the pads of the connection matrix are populated with bond wires using the database.