The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a support structure, an electronic component and an adhesive. The support structure is disposed on the substrate. The electronic component is disposed on the support structure. The adhesive is disposed between the substrate and the electronic component and covers the support structure. A hardness of the support structure is less than a hardness of the electronic component.

An integrated circuit device may include a programmable fabric die having programmable logic fabric and configuration memory that may configure the programmable logic fabric. The integrated circuit device may also include a base die that may provide fabric support circuitry, including memory and/or communication interfaces as well as compute elements that may also be application-specific. The memory in the base die may be directly accessed by the programmable fabric die using a low-latency, high capacity, and high bandwidth interface.

A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.

A semiconductor package device includes a circuit layer having a top surface, a first electronic component disposed on the top surface of the circuit layer, and a first conductive element disposed on the top surface of the circuit layer, the first conductive element having a top surface. The first electronic component has an active surface and a back surface facing the top surface of the circuit layer. A distance between the active surface of the first electronic component and the top surface of the circuit layer is greater than a distance between the top surface of the first conductive element and the top surface of the circuit layer.

The presently disclosed programmable fabric die includes a direct fabric die-to-fabric die interconnect interface column disposed in a sector of programmable logic fabric. Each row of the interconnect interface column includes at least one interconnect interface that is electrically coupled to a microbump. The microbump is configured to be electrically coupled to another microbump of another interconnect interface of another fabric die through an interposer. The fabric die may include multiple interconnect interface columns that each extend deep into the sector, enabling low latency connections between the fabric dies and reducing routing congestion. In some embodiments, the fabric die may include interconnect interfaces that are instead distributed throughout logic blocks of the sector.

A multichip package comprising: a first chip package comprising a first semiconductor IC chip, a first polymer layer in a space beyond and extending from a sidewall of the first semiconductor IC chip, a first through package via in the first polymer layer, and a first interconnection scheme under the first semiconductor IC chip, first polymer layer and first through package via, wherein the first semiconductor IC chip comprises a plurality of volatile memory cells configured to store first data associated with a plurality of resulting values for a look-up table (LUT) and a selection circuit configured to select, in accordance with a first input data set thereof, a data from a second input data set thereof as an output data for the logic operation; a first metal bump under the first chip package; and a non-volatile memory IC chip over the first chip package, wherein the non-volatile memory IC chip comprises a plurality of first non-volatile memory cells configured to store second data associated with the plurality of resulting values for the look-up table (LUT), wherein the first data are associated with the second data.

A method for tuning a resonant frequency of wireless communication circuitry on a multichip module including a plurality of chips includes applying an electrical insulator to an upper surface of the multichip module; creating a plurality of openings in the electrical insulator, each opening being positioned at a successive one of the bond pads to be electrically connected to create a plurality of exposed bond pads; applying metal to each exposed bond pad to form a successive one of a plurality of interconnect bases; removing a portion of the layer of photoresist to create a plurality of bridge supports, each bridge support positioned between a successive pair of interconnect bases; applying metal to each bridge support and associated interconnect bases to form a successive one of the interconnect traces; removing the bridge supports; and disconnecting one or more of the interconnect traces as necessary to obtain a target resonant frequency.

A three-dimensional programmable interconnection system based on a multi-chip package includes: a programmable metal bump or pad at a bottom of the multi-chip package; a first programmable interconnect provided by an interposer of the multi-chip package; a second programmable interconnect provided by the interposer; and a switch provided by a first semiconductor chip of the multi-chip package, wherein the switch is configured to control connection between the first and second programmable interconnects, wherein the programmable metal bump or pad couples to a second semiconductor chip of the multi-chip package through the switch and the first and second programmable interconnects, wherein the first and second semiconductor chips are over the interposer.

A multichip package includes: a chip package comprising a first IC chip, a polymer layer in a space beyond and extending from a sidewall of the first IC chip, a through package via in the polymer layer, an interconnection scheme under the first IC chip, polymer layer and through package via, and a metal bump under the interconnection scheme and at a bottom of the chip package, wherein the first IC chip comprises memory cells for storing data therein associated with resulting values for a look-up table (LUT) and a selection circuit comprising a first input data set for a logic operation and a second input data set associated with the data stored in the memory cells, wherein the selection circuit selects, in accordance with the first input data set, data from the second input data set as an output data for the logic operation; and a second IC chip over the chip package, wherein the second IC chip couples to the first IC chip through, in sequence, the through package via and interconnection scheme, wherein the second IC chip comprises a hard macro having an input data associated with the output data for the logic operation.

Programmable interposers for connecting integrated circuits, methods for programming programmable interposers, and integrated circuit packaging are provided. The programmable interposers are electrically reconfigurable to allow custom system-in-package (SiP) operation and configuration, field configurability, and functional obfuscation for secure integrated circuits fabricated in non-trusted environments. The programmable interposer includes, in one implementation, an interposer substrate and a programmable metallization cell (PMC) switch. The PMC switch is formed on the interposer substrate and is coupled between a signal input and a signal output. The PMC switch is electrically configurable between a high resistance state and a low resistance state.