In an embodiment, a device includes: a first and second integrated circuit die; and a hybrid redistribution structure including: a first photonic die; a second photonic die; a first dielectric layer laterally surrounding the first photonic die and the second photonic die, the first integrated circuit die and the second integrated circuit die being disposed adjacent a first side of the first dielectric layer; conductive features extending through the first dielectric layer and along a major surface of the first dielectric layer, the conductive features electrically coupling the first photonic die to the first integrated circuit die, the conductive features electrically coupling the second photonic die to the second integrated circuit die; a second dielectric layer disposed adjacent a second side of the first dielectric layer; and a waveguide disposed between the first dielectric layer and the second dielectric layer, the waveguide optically coupling the first and second photonic dies.

A system-on-wafer structure and a fabrication method. The structure includes a wafer substrate, an integrated chiplet, a system configuration board and a thermal module. The wafer substrate and the integrated chiplet are bonded through a wafer micro bump array and a chiplet micro bump array. The wafer substrate and the system configuration board are bonded through a copper pillar array on wafer substrate topside and a pad on system configuration board backside. A molding layer is provided between the wafer substrate and the system configuration board, and is configured to mold the wafer substrate, the integrated chiplet and the copper pillar array. Integrated chiplet are electrically connected to each other through a re-distributed layer in wafer substrate. The integrated chiplet is electrically connected to the system configuration board through the re-distributed layer and the copper pillar array. The thermal module is attached to the backside of the wafer substrate.

A multichip package comprising: a first chip package comprising a first semiconductor IC chip, a first polymer layer in a space beyond and extending from a sidewall of the first semiconductor IC chip, a first through package via in the first polymer layer, and a first interconnection scheme under the first semiconductor IC chip, first polymer layer and first through package via, wherein the first semiconductor IC chip comprises a plurality of volatile memory cells configured to store first data associated with a plurality of resulting values for a look-up table (LUT) and a selection circuit configured to select, in accordance with a first input data set thereof, a data from a second input data set thereof as an output data for the logic operation; a first metal bump under the first chip package; and a non-volatile memory IC chip over the first chip package, wherein the non-volatile memory IC chip comprises a plurality of first non-volatile memory cells configured to store second data associated with the plurality of resulting values for the look-up table (LUT), wherein the first data are associated with the second data.

A three-dimensional programmable interconnection system based on a multi-chip package includes: a programmable metal bump or pad at a bottom of the multi-chip package; a first programmable interconnect provided by an interposer of the multi-chip package; a second programmable interconnect provided by the interposer; and a switch provided by a first semiconductor chip of the multi-chip package, wherein the switch is configured to control connection between the first and second programmable interconnects, wherein the programmable metal bump or pad couples to a second semiconductor chip of the multi-chip package through the switch and the first and second programmable interconnects, wherein the first and second semiconductor chips are over the interposer.

The presently disclosed programmable fabric die includes a direct fabric die-to-fabric die interconnect interface column disposed in a sector of programmable logic fabric. Each row of the interconnect interface column includes at least one interconnect interface that is electrically coupled to a microbump. The microbump is configured to be electrically coupled to another microbump of another interconnect interface of another fabric die through an interposer. The fabric die may include multiple interconnect interface columns that each extend deep into the sector, enabling low latency connections between the fabric dies and reducing routing congestion. In some embodiments, the fabric die may include interconnect interfaces that are instead distributed throughout logic blocks of the sector.

A semiconductor device includes a first chip package, a heat dissipation structure and an adapter. The first chip package includes a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die has an active surface and a back surface opposite to the active surface. The heat dissipation structure is connected to the chip package. The adapter is disposed over the first chip package and electrically connected to the semiconductor die.

In an embodiment, a device includes: a first and second integrated circuit die; and a hybrid redistribution structure including: a first photonic die; a second photonic die; a first dielectric layer laterally surrounding the first photonic die and the second photonic die, the first integrated circuit die and the second integrated circuit die being disposed adjacent a first side of the first dielectric layer; conductive features extending through the first dielectric layer and along a major surface of the first dielectric layer, the conductive features electrically coupling the first photonic die to the first integrated circuit die, the conductive features electrically coupling the second photonic die to the second integrated circuit die; a second dielectric layer disposed adjacent a second side of the first dielectric layer; and a waveguide disposed between the first dielectric layer and the second dielectric layer, the waveguide optically coupling the first and second photonic dies.

A multi-chip module hybrid integrated circuit (MCM-HIC) provides cold spare support to an apparatus comprising a plurality of ICs and/or other circuits that are not cold spare compliant. At least one core IC and at least one cold spare chiplet are installed on an interconnecting substrate having a plurality of power zones to which power can be applied and withdrawn as needed. When powered, the cold spare chiplets serve as mediators and interfaces between the non cold spare compliant circuits. When the cold spare chiplets are at least partly unpowered, they protect all interconnected circuits, and ensure that interconnected circuits that remain powered are not hindered by unpowered interconnected circuits. Cold spare chiplets can extend across boundaries between power zones. External circuits can be exclusively interfaced to a subset of the power zones. Separate power circuits within a power zone can be sequenced during application and withdrawal of power.

A multi-chip module hybrid integrated circuit (MCM-HIC) provides cold spare support to an apparatus comprising a plurality of ICs and/or other circuits that are not cold spare compliant. At least one core IC and at least one cold spare chiplet are installed on an interconnecting substrate having a plurality of power zones to which power can be applied and withdrawn as needed. When powered, the cold spare chiplets serve as mediators and interfaces between the non cold spare compliant circuits. When the cold spare chiplets are at least partly unpowered, they protect all interconnected circuits, and ensure that interconnected circuits that remain powered are not hindered by unpowered interconnected circuits. Cold spare chiplets can extend across boundaries between power zones. External circuits can be exclusively interfaced to a subset of the power zones. Separate power circuits within a power zone can be sequenced during application and withdrawal of power.

A semiconductor module according to embodiments includes a first external terminal, a second external terminal, a first semiconductor switch which is electrically connected between the first external terminal and the second external terminal and includes a first gate electrode, a second semiconductor switch which is electrically connected in parallel with the first semiconductor switch, between the first external terminal and the second external terminal, and includes a second gate electrode, a first fuse electrically connected between the first external terminal and the first semiconductor switch, and a second fuse electrically connected between the second external terminal and the first semiconductor switch.