A microelectronic device, a semiconductor package including the device, an IC device assembly including the package, and a method of making the device. The device includes a substrate; physical layer (PHY) circuitry on the substrate including a plurality of receive (RX) circuits and a plurality of transmit (TX) circuits; electrical contact structures at a bottom surface of the device; signal routing paths extending between the electrical contact structures on one hand, and, on another hand, at least some of the RX circuits or at least some of the TX circuits; and electrical pathways leading to the PHY circuitry and configured such that at least one of: an enable signal input to the device is to travel through at least some of the electrical pathways to enable a portion of the PHY circuitry; or a disable signal input to the device is to travel through at least some of the electrical pathways to disable a corresponding portion of the PHY circuitry.

A system and method of providing high bandwidth and low latency memory architecture solutions for next generation processors is disclosed. The package contains a substrate, a memory device embedded in the substrate via EMIB processes and a processor disposed on the substrate partially over the embedded memory device. The I/O pads of the processor and memory device are vertically aligned to minimize the distance therebetween and electrically connected through EMIB uvias. An additional memory device is disposed on the substrate partially over the embedded memory device or on the processor. I/O signals are routed using a redistribution layer on the embedded memory device or an organic VHD redistribution layer formed over the embedded memory device when the additional memory device is laterally adjacent to the processor and the I/O pads of the processor and additional memory device are vertically aligned when the additional memory device is on the processor.

A semiconductor device includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

A dual-sided embedded multi-die interconnect bridge provides power and source conduits from the bridge bottom at a silicon portion, in short paths to dice on a die side of an integrated-circuit package substrate. Signal traces are in a metallization on the silicon portion of the dual-sided EMIB. Power, ground and signal vias all emanate from the dual-sided embedded multi-die interconnect bridge, with power and ground entering the bridge from central regions of the silicon portion.

Semiconductor devices including vertically-stacked combination memory devices and associated systems and methods are disclosed herein. The vertically-stacked combination memory devices include at least one volatile memory die and at least one non-volatile memory die stacked on top of each other. The corresponding stack may be attached to a controller die that is configured to provide interface for the attached volatile and non-volatile memory dies.

A method of forming an integrated circuit includes placing a first and a second standard cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on at least the first or second standard cell layout design. The first standard cell layout design has a first height. The second standard cell layout design has a second height. Placing the first standard cell layout design includes placing a first set of pin layout patterns on a first layout level over a first set of gridlines, extending in a first direction, and having a first width in a second direction. Placing the second standard cell layout design includes placing a second set of pin layout patterns on the first layout level over a second set of gridlines, extending in the first direction, and having a second width in the second direction.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

A method for forming an electronic chip assembly. A first metal plate is coupled to a first side of a substrate to form a backing plate. A first cavity is created extending through the substrate to extend at least to the first metal plate. An electronic component is bonded to the substrate such that the electronic component is located within the first cavity. A second metal plate, having a second cavity, is disposed to a second side of the substrate, and over the first cavity such that the electronic component is encased within the first and second cavities by the first and second metal plates.

A method for fabricating a semiconductor package includes: providing a semiconductor wafer having opposing first and second sides, the semiconductor wafer being arranged on a first carrier such that the second side of the wafer faces the carrier; masking sawing lines on the first side of the semiconductor wafer with a mask; depositing a first metal layer on the masked first side of the semiconductor wafer by cold spraying or by high velocity oxygen fuel spraying or by cold plasma assisted deposition, such that the first metal layer does not cover the sawing lines, the deposited first metal layer having a thickness of 50 μm or more; singulating the semiconductor wafer into a plurality of semiconductor dies by sawing the semiconductor wafer along the sawing lines; and encapsulating the plurality of semiconductor dies with an encapsulant such that the first metal layer is exposed on a first side of the encapsulant.

In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.