A magnetically-coupled structure is integrated with an integrated circuit in back end-of-line (BEOL) digital CMOS fabrication processes. A differential primary (or secondary) coil is formed by patterning a thick copper (Cu) metal layer, and a single-ended secondary (or primary) coil is formed by patterning a thick aluminum (Al) top metal bonding layer. Crossovers and/or cross-unders are formed using thin metal layers. One embodiment provides a stacked balun with a differential primary input winding defined in the copper layer, directly underneath a single-ended spiral winding defined in the aluminum layer. The spiral forms the single-ended secondary output of the balun and is rotated by 90° to prevent metal shorting for its cross-under connections. Another embodiment provides a transformer with one differential primary (or secondary) coil defined in the copper layer and another differential secondary (or primary) coil defined in the aluminum layer and adding a center tap. The position of the tap is selected to compensate for phase differences and provide desired balance.

An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device. The lower magnetic layer and the upper magnetic layer form a continuous magnetic layer around the insulating layer and the conductors of the inductive device. Magnetic leakage paths are provided by forming openings through the upper magnetic layer. The openings may be formed through the upper magnetic layer by semiconductor processes that have relatively higher precision and accuracy compared to semiconductor processes for forming the insulating layer such as spin coating. This reduces magnetic leakage path variation within the inductive device and from inductive device to inductive device.

A package having reduced injected noise into balls carrying sensitive signals is described. An array of solder balls is mounted on a substrate wherein the solder balls provide package output. Solder balls adjacent to a noise-sensitive solder ball package output are shifted by one-half the pitch of the array of solder balls to equalize mutual parasitic inductance around the noise-sensitive solder ball package output.

An integrated circuit (IC) can include multiple power domains that are served by a common power source. In an example, a first IC power rail can be coupled to the source and a first consumer circuit. A second IC power rail can be coupled to a second consumer circuit. The second IC power rail can receive a filtered power signal from an isolation module that is coupled between the first and second power rails. In an example, an isolation module includes an integrated inductor and a capacitor (e.g., a land-side capacitor). The integrated inductor can optionally include multiple spaced apart conductive layers that are electrically coupled. The integrated inductor can optionally include a series of conductive traces and plated through holes or vias that together provide a current path with multiple turns.

A recess in a die backside surface occupies a footprint that accommodates an inductor coil that is formed in metallization above an active surface of the die. Less semiconductive material is therefore close to the inductor coil. A ferromagnetic material is formed in the recess, or a ferromagnetic material is formed on a dielectric layer above the inductor coil. The recess may extend across a die that allows the die to be deflected at the recess.

An amplifier has a plurality of gate finger electrodes, two gate connection electrodes, a plurality of source electrodes and a plurality of drain electrodes, and a plurality of drain connection elements. The plurality of gate finger electrodes are arranged pectinate on the surface of the active region of the semiconductor substrate. The two gate connection electrodes connect in common each of both ends of the plurality of gate finger electrodes. The plurality of source electrodes and the plurality of drain electrodes are arranged alternately on the surface of the semiconductor substrate between the plurality of gate finger electrodes. The plurality of drain connection elements connects in sequence the plurality of drain electrodes. The ratio of the inductance value of each drain connection element to the parasitic capacitance of the drain-source electrodes between the corresponding drain electrode and the source electrode is constant.

Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

A package comprises a body, and an electrically conductive pattern supported by said body. An interface portion is configured to receive a module to a removable attachment with the package. The electrically conductive pattern comprises, at least partly within said interface portion, a wireless coupling pattern that constitutes one half of a wireless coupling arrangement.

Embodiments of the invention include a microelectronic device and methods of forming a microelectronic device. In an embodiment the microelectronic device includes a semiconductor die and an inductor that is electrically coupled to the semiconductor die. The inductor may include one or more conductive coils that extend away from a surface of the semiconductor die. In an embodiment each conductive coils may include a plurality of traces. For example, a first trace and a third trace may be formed over a first dielectric layer and a second trace may be formed over a second dielectric layer and over a core. A first via through the second dielectric layer may couple the first trace to the second trace, and a second via through the second dielectric layer may couple the second trace to the third trace.

A semiconductor device package is provided, including a semiconductor device, a molding material, and a conductive slot. The molding material surrounds the semiconductor device. The conductive slot is positioned over the molding material and having an opening and at least two channels connecting the opening to the edges of the conductive slot.