A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

A method includes: forming an interconnect structure over a semiconductor substrate. The interconnect structure includes: a magnetic core and a conductive coil winding around the magnetic core and electrically insulated from the magnetic core, wherein the conductive coil has horizontally-extending conductive lines and vertically-extending conductive vias electrically connecting the horizontally-extending conductive lines, wherein the magnetic core and the conductive coil are arranged in an inductor zone of the interconnect structure. The interconnect structure also includes a dielectric material electrically insulating the magnetic core from the conductive coil, and a connecting metal line adjacent to and on the outside of the inductor zone. The connecting metal line is electrical isolated from the inductor zone. The connecting metal line includes an upper surface lower than an upper surface of the second conductive vias and a bottom surface higher than a bottom surface of the first conductive vias.

An apparatus is provided which comprises: one or more pads comprising metal on a first substrate surface, the one or more pads to couple with contacts of an integrated circuit die, one or more substrate layers comprising dielectric material, one or more conductive contacts on a second substrate surface, opposite the first substrate surface, the one or more conductive contacts to couple with contacts of a printed circuit board, one or more inductors on the one or more substrate layers, the one or more inductors coupled with the one or more conductive contacts and the one or more pads, and highly thermally conductive material between the second substrate surface and a printed circuit board surface, the highly thermally conductive material contacting the one or more inductors. Other embodiments are also disclosed and claimed.

A first circuit board includes a positive output pin and a negative output pin of a power conversion circuit, each of which has a shape projecting from a second main surface. A second circuit board has a positive through via and a negative through via, each of which has a shape extending between a third main surface and a fourth main surface. The second main surface of the first circuit board and the third main surface of the second circuit board are physically in close contact with each other. The positive output pin is inserted through the positive through via to reach the fourth main surface. The negative output pin is inserted through the negative through via in such a manner as to reach the fourth main surface. The load receives a current supplied from the power conversion circuit through the positive output pin and the negative output pin.

A configurable capacitance device includes a semiconductor substrate including a plurality of integrally formed capacitors; and a separate interconnect structure coupled to the semiconductor substrate, wherein the separate interconnect structure is configurable to electrically couple two or more of the plurality of integrally formed capacitors together in a parallel configuration.

Disclosed herein are asymmetric cored integrated circuit (IC) package supports, and related devices and methods. For example, in some embodiments, an IC package support may include a core region having a first face and an opposing second face, a first buildup region at the first face of the core region, and a second buildup region at the second face of the core region. A thickness of the first buildup region may be different than a thickness of the second buildup region. In some embodiments, an inductor may be included in the core region.

Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components. Further, the shield structure substantially covers the second electronic component and/or would substantially cover the first electronic component if the semiconductor packaging device was flipped vertically.

A semiconductor package structure is provided. The semiconductor package structure includes an electronic component, and an inductance component. The protection layer encapsulates the electronic component and has a top surface and a bottom surface. The top surface and the bottom surface collectively define a space to accommodate the electronic component. The inductance component outflanks the space from the top surface and the bottom surface of the protection layer.

A stacked transformer or inductor apparatus including a first layer with a first layer wire element extending around a center axis and a second layer with a second layer wire element. The second layer element includes side by side first and second wire components in parallel spaced relation extending around the center axis and the first wire component is connected to the first layer wire element to form a primary turn winding. A third layer includes a third layer wire element extending around the center axis and connected to the second wire component of the second layer wire element to form a secondary turn winding partially overlapping with the primary turn winding.

A semiconductor device includes a compound substrate, at least one front side pattern, at least one backside pattern and at least one through-wafer via structure. The compound substrate includes a front side and a backside. The at least one front side pattern is arranged on the front side of the compound substrate. The at least one backside pattern is arranged on the backside of the compound substrate. The least one through-wafer via structure penetrates the compound substrate from the front side to the backside. The at least one front side pattern, the at least one backside pattern and the at least one through-wafer form a three-dimensional inductor structure.