The present disclosure relates to semiconductor structures and, more particularly, to an ultra-high voltage resistor and methods of manufacture. The structure includes at least one resistor coupled to a well of a doped substrate, the at least one resistor being separated vertically from the well by an isolation region with one end of the resistor being attached to an input pad and another end coupled to circuitry.

A SiP module according to the embodiment comprises: a substrate; an image sensor disposed on one surface of the substrate; and a serializer embedded inside the substrate. The substrate includes a via hole that penetrates through the substrate in order to electrically connect the image sensor and the serializer.

Various implementations described herein are directed to an integrated circuit having a power gate cell and a first power distribution grid. The integrated circuit may include a second power distribution grid aligned with and disposed above the power gate cell. The second power distribution grid may be disposed between the power gate cell and the first power distribution grid.

A power delivery network, circuit, and method reduce die package resonance of an integrated circuit (IC) die. Decoupling capacitors interact with equivalent series inductances (ESLs) of power conductors within a package carrier substrate create the die package resonance characteristic. In one form, an anti-resonance tuning circuit has a first node conductively coupled to one of the IC die's positive or negative power supply conductors, and a second node conductively coupled directly to a selected conductive structure on the carrier substrate. The anti-resonance tuning circuit includes a tuning capacitor, a tuning inductor, and optionally a dampening resistor coupled in series and having values sufficient to mitigate the die package resonance. In another form, impedance adjustment techniques are provided to connect and tune the anti-resonance tuning circuit to lower an impedance peak.

A resistor may include a semiconductor layer having a source region, a drain region, and a channel region. The channel region may be between the source region and the drain region. The channel region may have a same polarity as the source region and the drain region. The resistor may further include a first inter-metal dielectric (IMD) layer on the channel region. The resistor may further include a front-side gate shield on the first IMD layer. The front-side gate shield may overlap the channel region.

An apparatus is provided which comprises: one or more first conductive contacts on a first surface, one or more second conductive contacts on a second surface opposite the first surface, a dielectric layer between the first and the second surfaces, and an embedded capacitor on the dielectric layer conductively coupled with one of the first conductive contacts, wherein the embedded capacitor comprises a first metal layer on the dielectric layer, a thin film dielectric material on a surface of the metal layer, a second metal layer on the surface of the first metal layer, and a third metal layer on the thin film dielectric material. Other embodiments are also disclosed and claimed.

A circuit for implementing a discharge path in an input/output circuit of an integrated circuit is described. The circuit comprises an input/output pad; a first node coupled to a power reference voltage; a first impedance element implemented between the first node and the input/output pad; a second node coupled to a ground reference voltage; and a second impedance element implemented between the second node and the input/output pad. A method of implementing a discharge path in an input/output circuit of an integrated circuit is also disclosed.

A resistor may include a semiconductor layer having a source region, a drain region, and a channel region. The channel region may be between the source region and the drain region. The channel region may have a same polarity as the source region and the drain region. The resistor may further include a first inter-metal dielectric (IMD) layer on the channel region. The resistor may further include a front-side gate shield on the first IMD layer. The front-side gate shield may overlap the channel region.

A semiconductor package is provided. The semiconductor package includes a semiconductor chip including an integrated circuit (IC) pad configured to output a wireless frequency signal, a lead frame including a package pad configured to receive the wireless frequency signal, a first wire of which one end is connected to the IC pad, a second wire of which one end is connected to the package pad, and a circuit element connected to the first wire and the second wire in parallel or in series. A radio frequency (RF) output impedance of the package pad or an RF output impedance of the IC pad is controlled by a type of the circuit element or a connection relationship between the circuit element, the first wire, and the second wire.

In a method of manufacturing a semiconductor device, a fin structure, which includes a stacked layer of first semiconductor layers and second semiconductor layers disposed over a bottom fin structure and a hard mask layer over the stacked layer, is formed. An isolation insulating layer is formed. A sacrificial cladding layer is formed over at least sidewalls of the exposed hard mask layer and stacked layer. A first dielectric layer is formed. A second dielectric layer is formed over the first dielectric layer. The second dielectric layer is recessed. A third dielectric layer is formed on the recessed second dielectric layer. The third dielectric layer is partially removed to form a trench. A fourth dielectric layer is formed by filling the trench with a dielectric material, thereby forming a wall fin structure.