The purpose of the present invention is to provide a photosensitive resin composition that yields a cured film having exceptional heat resistance, elongation, chemical resistance, permittivity, and dielectric tangent while being curable under low-temperature heat treatments, the percentage of film remaining after development being exceptional. To solve the above problem, the photosensitive resin composition of the present invention has the following configuration. Specifically, a photosensitive resin composition that contains a resin (A) and a photopolymerization initiator (B), said resin (A): containing one or more structural units selected from the group consisting of specific structural units represented by formula (1), formula (3), and formula (5); and also containing one or more structural units selected from the group consisting of structural units represented by formula (2), formula (4), and formula (6).

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first substrate including a center region and an edge region distal from the center region, a first circuit layer positioned on the first substrate, a center power pad positioned in the first circuit layer and above the center region, an edge power pad positioned in the first circuit layer, above the edge region, and electrically coupled to the center power pad, a redistribution power pattern positioned above the first circuit layer and electrically coupled to the center power pad, and an edge power via positioned between the edge power pad and the redistribution power pattern, and electrically connecting the edge power pad and the redistribution power pattern. The first substrate, the center power pad, the edge power pad, the redistribution power pattern, and the edge power via together configure a first semiconductor die.

An integrated circuit package includes a support substrate having a front side and a back side and an optical integrated circuit die having a back side mounted to the front side of the support substrate and having a front side with an optical sensing circuit. A glass optical element die has a back side mounted to the front side of the optical integrated circuit die over the optical sensing circuit. The mounting of the glass optical element die is made by a layer of transparent adhesive which extends to the cover the optical sensing circuit and a portion of the front side of the optical integrated circuit die peripherally surrounding the optical sensing circuit. An encapsulation material body encapsulates the glass optical element die and the optical integrated circuit die.

A pixel device including a pixel, a planarization layer covering side surfaces and an upper surface of the pixel, and pixel device pads disposed on the planarization layer, in which the pixel includes a first light emitting stack, a second light emitting stack disposed under the first light emitting stack, a third light emitting stack disposed under the second light emitting stack, and pixel pads electrically connected to the first, second, and through third light emitting stacks, the pixel device pads are electrically connected to the pixel pads through the planarization layer, and at least a portion of each of the pixel device pads extends from an upper region of the pixel to an inner surface of the planarization layer formed between the planarization layer and the pixel.

In a described example, an apparatus includes: a semiconductor die having a device side surface; bond pads on the semiconductor die on the device side surface; post connects having a proximate end on the bond pads and extending from the bond pads to a distal end, the diameter of the post connects at the proximate end being the same as the diameter of the post connects at the distal end; polyimide material covering sides of the post connects and covering at least a portion of the bond pads; and solder bumps on the distal end of the post connects.

The present application discloses a semiconductor device. The semiconductor device includes a package structure including a first side and a second side opposite to the first side; an interposer structure positioned over the first side of the package structure; a first die positioned over the interposer structure; a second die positioned over the interposer structure; and a plurality of middle interconnectors positioned between the first side of the package structure and the first die and between the first side of the package structure and the second die. The plurality of middle interconnectors respectively includes a middle exterior layer positioned between the first side of the package structure and the interposer structure, a middle interior layer enclosed by the middle exterior layer, and a cavity enclosed by the interposer structure, the package structure, and the middle interior layer.

The present application discloses a semiconductor device. The semiconductor device includes a package structure including a first side and a second side opposite to the first side; an interposer structure positioned over the first side of the package structure; a first die positioned over the interposer structure; a second die positioned over the interposer structure; and a plurality of middle interconnectors positioned between the first side of the package structure and the first die and between the first side of the package structure and the second die. The plurality of middle interconnectors topographically aligned with the first die include a first density. The plurality of middle interconnectors topographically aligned with the second die include a second density different from the first density.

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

A manufacturing method of a semiconductor package includes etching a first surface and a side surface of a base substrate, the base substrate including the first, a second and the side surfaces positioned between the first and the second surfaces, the base substrate containing a metal, attaching a metal different from the metal contained in the base substrate to the first and the side surfaces, disposing a semiconductor device on the second surface, the semiconductor device having an external terminal, forming a resin insulating layer sealing the semiconductor device, forming a first conductive layer on the resin insulating layer, forming an opening, exposing the external terminal, in the first conductive layer and the resin insulating layer; and forming a metal layer on the first and the side surfaces, on the first conductive layer and in the opening.

A fan-out semiconductor package includes a first connection member having a through hole, a semiconductor chip in the through hole, having an active surface with a connection pad and an inactive surface on an opposing side. An encapsulant encapsulates at least a portion of the first connection member and the semiconductor chip. A second connection member is on the first connection member and the semiconductor chip. The first connection member and the second connection member each include a redistribution layer electrically connected to a connection pad of the semiconductor chip. The interface between the second connection member and the encapsulant is located on a different level from the level of the interface between the second connection member and a redistribution layer of the first connection member or the level of the interface between the second connection member and a connection pad of the semiconductor chip.